Mark William Nelson
Affiliations: | 2000 | Colorado State University, Fort Collins, CO |
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"Mark Nelson"Mean distance: 10.46 | S | N | B | C | P |
Parents
Sign in to add mentor| Bruce Parkinson | grad student | 2000 | Colorado State | |
| (Use of scanning probe microscopies to study dopants at semiconductor surfaces.) | ||||
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Publications
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| Schroeder PG, Nelson MW, Parkinson BA, et al. (2000) Investigation of band bending and charging phenomena in frontier orbital alignment measurements of para-quaterphenyl thin films grown on highly oriented pyrolytic graphite and SnS2 Surface Science. 459: 349-364 |
| Schlaf R, Schroeder PO, Nelson MW, et al. (2000) Determination of interface dipole and band bending at the Ag/tris (8-hydroxyquinolinato) gallium organic Schottky contact by ultraviolet photoemission spectroscopy Surface Science. 450: 142-152 |
| Nelson MW, Schroeder PG, Schlaf R, et al. (1999) Two-dimensional dopant profiling of an integrated circuit using bias-applied phase-imaging tapping mode atomic force microscopy Electrochemical and Solid-State Letters. 2: 475-477 |
| Nelson MW, Schroeder PG, Schlaf R, et al. (1999) Two-dimensional dopant profiling of patterned Si wafers using phase imaging tapping mode atomic force microscopy with applied biases Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 17: 1354 |
| Schlaf R, Schroeder PG, Nelson MW, et al. (1999) Observation of strong band bending in perylene tetracarboxylic dianhydride thin films grown on SnS2 Journal of Applied Physics. 86: 1499-1509 |
| Schlaf R, Schroeder PG, Nelson MW, et al. (1999) Observation of strong band bending in perylene tetracarboxylic dianhydride thin films grown on SnS2 Journal of Applied Physics. 86: 1499-1509 |
| Nelson MW, Schroeder PG, Schlaf R, et al. (1999) Spatially resolved dopant profiling of patterned Si wafers by bias-applied phase-imaging tapping-mode atomic force microscopy Applied Physics Letters. 74: 1421-1423 |
| Nelson MW, Schroeder PG, Schlaf R, et al. (1999) Spatially resolved dopant profiling of patterned Si wafers by bias-applied phase-imaging tapping-mode atomic force microscopy Applied Physics Letters. 74: 1421-1423 |
| Schlaf R, Crisafulli LA, Murata H, et al. (1999) Determination of the electronic structure of organic Schottky contacts by photoemission spectroscopy Proceedings of Spie - the International Society For Optical Engineering. 3797: 189-197 |
| Nelson MW. (1999) Two-dimensional dopant profiling of patterned Si wafers using phase imaging tapping mode atomic force microscopy with applied biases Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 17: 1354-1360 |