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Rodney I. Pelzel, Ph.D.

Affiliations: 
University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Chemical Engineering
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"Rodney Pelzel"
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W. Henry Weinberg grad student 2000 UC Santa Barbara
 (Characterization of gallium sulfide passivating layers grown on gallium arsenide (001) using tertiarybutyl gallium sulfide.)

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Gu X, Lubyshev D, Batzel J, et al. (2010) Growth, characterization, and uniformity analysis of 200 mm wafer-scale SrTiO3/Si Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 28
Gu X, Lubyshev D, Batzel J, et al. (2009) Commercial molecular beam epitaxy production of high quality SrTiO3 on large diameter Si substrates Journal of Vacuum Science & Technology B. 27: 1195-1199
Lu X, Ishiwara H, Gu X, et al. (2009) Characteristics of metal-ferroelectric-insulator-semiconductor diodes composed of Pt electrodes and epitaxial Sr0.8Bi2.2Ta2O9(001)/SrTiO3(100)/Si(100) structures Journal of Applied Physics. 105: 24111
Maroudas D, Zepeda-Ruiz LA, Pelzel RI, et al. (2002) Strain relaxation and interfacial stability in III-V semiconductor strained-layer heteroepitaxy: Atomistic and continuum modeling and comparisons with experiments Computational Materials Science. 23: 250-259
Zepeda-Ruiz LA, Pelzel RI, Nosho BZ, et al. (2001) Deformation behavior of coherently strained InAs/GaAs(111) heteroepitaxial systems: Theoretical calculations and experimental measurements Journal of Applied Physics. 90: 2689-2698
Zepeda-Ruiz LA, Pelzel RI, Weinberg WH, et al. (2000) Interfacial stability and structure in InAs/GaAs(111)A heteroepitaxy: Effects of buffer layer thickness and film compositional grading Applied Physics Letters. 77: 3352-3354
Pelzel RI, Zepeda-Ruiz LA, Nosho BZ, et al. (2000) Mechanical behavior of thin buffer layers in InAs/GaAs(111)A heteroepitaxy Applied Physics Letters. 76: 3017-3019
Hopcus AB, Yi SI, Chung CH, et al. (2000) Growth of GaS on GaAs(100)-(4 × 2) with the single-source precursor [(tBu)GaS]4 Surface Science. 446: 55-62
Pelzel RI, Nosho BZ, Fimland BO, et al. (2000) Adsorption of [(tBu)GaS]4 on the GaAs(001)-(4×2) surface Surface Science. 470: L81-L87
Pelzel RI, Zepeda-Ruiz LA, Weinberg WH, et al. (2000) Effects of buffer layer thickness and film compositional grading on strain relaxation kinetics in InAs/GaAs(111)A heteroepitaxy Surface Science. 463: L634-L640
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