Choelhwyi Bae, Ph.D.
Affiliations: | North Carolina State University, Raleigh, NC |
Area:
ultra-thin Si oxyitride devicesGoogle:
"Choelhwyi Bae"Mean distance: 10.05 | S | N | B | C | P |
Parents
Sign in to add mentor| Gerald Lucovsky | grad student | 2003 | NCSU | |
| (Gallium nitride-dielectric interface formation for gate dielectrics and passivation layers using remote plasma processing.) | ||||
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Publications
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| Ho TA, Bae C, Nam H, et al. (2018) Metallic Ni3S2 Film Grown by Atomic Layer Deposition as an Efficient and Stable Electrocatalyst for Overall Water Splitting. Acs Applied Materials & Interfaces |
| Lee MJ, Jang M, Bae CS, et al. (2016) Effects of Oriental Medicine Kyung-Ok-Ko on Uterine Abnormality in Hyperandrogenized Rats. Rejuvenation Research |
| Moon E, Park SW, Chung H, et al. (2014) Truncated corner cubes with near-perfect retroreflection efficiency. Applied Optics. 53: 7972-8 |
| Park SW, Moon E, Chung H, et al. (2014) Quasi-retroreflection from corner cubes with refractive free-form surfaces. Applied Optics. 53: 6605-11 |
| Woo S, Hong H, Kim S, et al. (2008) Characteristics of Metal–Oxide–Semiconductor Field-Effect Transistors with HfO2/SiO2/Si and HfO2/SiOxNy/Si Stack Structures Formed by Remote Plasma Technique Japanese Journal of Applied Physics. 47: 6196-6199 |
| Kim S, Kim J, Choi J, et al. (2006) Remote Plasma Atomic Layer Deposition of HfO2 Thin Films Using the Alkoxide Precursor Hf ( mp ) 4 Electrochemical and Solid State Letters. 9 |
| Choi J, Kim S, Kang H, et al. (2006) Effects of N2 RPN on the Structural and Electrical Characteristics of Remote Plasma Atomic Layer-Deposited HfO2 Films Electrochemical and Solid State Letters. 9 |
| Kim S, Kim JY, Kim J, et al. (2006) Thermal Stability of ALD HfO2 Thin Films and Interfacial Layers on the Oxynitride Underlayer Formed Using Remote Plasma Electrochemical and Solid State Letters. 9 |
| Choi J, Kim S, Kim J, et al. (2006) Effects of N2 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics grown using remote plasma atomic layer deposition methods Journal of Vacuum Science and Technology. 24: 900-907 |
| Choi J, Kim S, Kim J, et al. (2006) Characteristics of remote plasma atomic layer-deposited HfO2 films on O2 and N2 plasma-pretreated Si substrates Journal of Vacuum Science and Technology. 24: 678-681 |