William J. Royea, Ph.D.
Affiliations: | 2001 | California Institute of Technology, Pasadena, CA |
Area:
artificial photosynthesis, electronic nosesGoogle:
"William Royea"Mean distance: 7.8 | S | N | B | C | P |
Parents
Sign in to add mentor| Nathan Saul Lewis | grad student | 2001 | Caltech | |
| (Investigations of charge -carrier dynamics at semiconductor /liquid interfaces.) | ||||
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Publications
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| Soriaga MP, Baricuatro JH, Cummins KD, et al. (2015) Electrochemical surface science twenty years later: Expeditions into the electrocatalysis of reactions at the core of artificial photosynthesis Surface Science. 631: 285-294 |
| Royea WJ, Hamann TW, Brunschwig BS, et al. (2006) A comparison between interfacial electron-transfer rate constants at metallic and graphite electrodes. The Journal of Physical Chemistry. B. 110: 19433-42 |
| Gstrein F, Michalak DJ, Royea WJ, et al. (2002) Effects of interfacial energetics on the effective surface recombination velocity of Si/liquid contacts Journal of Physical Chemistry B. 106: 2950-2961 |
| Royea WJ, Michalak DJ, Lewis NS. (2000) Role of inversion layer formation in producing low effective surface recombination velocities at Si/liquid contacts Applied Physics Letters. 77: 2566-2568 |
| Royea WJ, Juang A, Lewis NS. (2000) Preparation of air-stable, low recombination velocity Si(111) surfaces through alkyl termination Applied Physics Letters. 77: 1988-1990 |
| Royea WJ, Michalak DJ, Lewis NS. (2000) Role of inversion layer formation in producing low effective surface recombination velocities at Si/liquid contacts Applied Physics Letters. 77: 2566-2568 |
| Royea WJ, Juang A, Lewis NS. (2000) Preparation of air-stable, low recombination velocity Si(111) surfaces through alkyl termination Applied Physics Letters. 77: 1988-1990 |
| Sturzenegger M, Prokopuk N, Kenyon CN, et al. (1999) Reactions of Etched, Single Crystal (111)B-Oriented InP To Produce Functionalized Surfaces with Low Electrical Defect Densities The Journal of Physical Chemistry B. 103: 10838-10849 |
| Sturzenegger M, Prokopuk N, Kenyon CN, et al. (1999) Reactions of Etched, Single Crystal (111)B-Oriented InP to Produce Functionalized Surfaces with Low Electrical Defect Densities Journal of Physical Chemistry B. 103: 10838-10849 |
| Royea WJ, Fajardo AM, Lewis NS. (1997) Fermi Golden Rule Approach to Evaluating Outer-Sphere Electron-Transfer Rate Constants at Semiconductor/Liquid Interfaces The Journal of Physical Chemistry B. 101: 11152-11159 |