Ryan H. Tu, Ph.D.
Affiliations: | 2007 | Stanford University, Palo Alto, CA |
Area:
nanomaterialsGoogle:
"Ryan Tu"Mean distance: 9 | S | N | B | C | P |
Parents
Sign in to add mentor| Hongjie Dai | grad student | 2007 | Stanford | |
| (Germanium nanowire controlled synthesis, alignment, and field-effect-transistor characteristics.) | ||||
BETA: Related publications
See more...
Publications
|
You can help our author matching system! If you notice any publications incorrectly attributed to this author, please sign in and mark matches as correct or incorrect. |
| Tu R, Zhang L, Nishi Y, et al. (2007) Measuring the capacitance of individual semiconductor nanowires for carrier mobility assessment. Nano Letters. 7: 1561-5 |
| Paul BC, Tu R, Fujita S, et al. (2007) An Analytical Compact Circuit Model for Nanowire FET Ieee Transactions On Electron Devices. 54: 1637-1644 |
| Zhang L, Tu R, Dai H. (2006) Parallel core-shell metal-dielectric-semiconductor germanium nanowires for high-current surround-gate field-effect transistors. Nano Letters. 6: 2785-9 |
| Zhang G, Qi P, Wang X, et al. (2006) Selective etching of metallic carbon nanotubes by gas-phase reaction. Science (New York, N.Y.). 314: 974-7 |
| Wang D, Tu R, Zhang L, et al. (2005) Deterministic one-to-one synthesis of germanium nanowires and individual gold nanoseed patterning for aligned nanowire arrays. Angewandte Chemie (International Ed. in English). 44: 2925-9 |
| Li Y, Peng S, Mann D, et al. (2005) On the origin of preferential growth of semiconducting single-walled carbon nanotubes. The Journal of Physical Chemistry. B. 109: 6968-71 |
| Javey A, Tu R, Farmer DB, et al. (2005) High performance n-type carbon nanotube field-effect transistors with chemically doped contacts. Nano Letters. 5: 345-8 |
| Wang D, Wang Q, Javey A, et al. (2003) Germanium nanowire field-effect transistors with SiO2 and high-κ HfO2 gate dielectrics Applied Physics Letters. 83: 2432-2434 |