Blas P. Uberuaga, Ph.D.
Affiliations: | 2000 | University of Washington, Seattle, Seattle, WA |
Area:
Physical ChemistryGoogle:
"Blas Uberuaga"Mean distance: 9.98 | S | N | B | C | P |
Parents
Sign in to add mentor| Hannes Jónsson | grad student | 2000 | University of Washington | |
| (Diffusion in semiconductors: A theoretical study.) | ||||
| Arthur F. Voter | post-doc | LANL (E-Tree) | ||
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Publications
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| Liu XY, Pilania G, Talapatra AA, et al. (2020) Band-Edge Engineering To Eliminate Radiation-Induced Defect States in Perovskite Scintillators. Acs Applied Materials & Interfaces |
| Agarwal S, Liedke MO, Jones ACL, et al. (2020) A new mechanism for void-cascade interaction from nondestructive depth-resolved atomic-scale measurements of ion irradiation-induced defects in Fe. Science Advances. 6: eaba8437 |
| Uberuaga BP, Perriot R. (2020) Spatially-varying inversion near grain boundaries in MgAl2O4 spinel Rsc Advances. 10: 11737-11742 |
| Hernandez SC, Freibert FJ, Uberuaga BP, et al. (2020) Role of electronic and magnetic interactions in defect formation and anomalous diffusion in δ-Pu Journal of Nuclear Materials. 532: 152027 |
| Janish MT, Schneider MM, Valdez JA, et al. (2020) In-situ re-crystallization of heavily-irradiated Gd2Ti2O7 Acta Materialia. 194: 403-411 |
| Auguste R, Liedke MO, Selim FA, et al. (2020) Measurement and Simulation of Vacancy Formation in 2-MeV Self-irradiated Pure Fe Jom. 72: 2436-2444 |
| Sandoval L, Perez D, Uberuaga BP, et al. (2019) An Overview of Recent Standard and Accelerated Molecular Dynamics Simulations of Helium Behavior in Tungsten. Materials (Basel, Switzerland). 12 |
| Liu XY, Martinez E, Uberuaga BP. (2019) Dissociated vacancies and screw dislocations in MgO and UO: atomistic modeling and linear elasticity analysis. Scientific Reports. 9: 6499 |
| Uberuaga BP, Perriot R, Pilania G. (2019) The impact of chemical order on defect transport in mixed pyrochlores. Physical Chemistry Chemical Physics : Pccp |
| Goyal A, Mathew K, Hennig RG, et al. (2019) The Conundrum of Relaxation Volumes in First-Principles Calculations of Charged Defects in UO2 Applied Sciences. 9: 5276 |