Thomas E. Beechem, Ph.D.
Affiliations: | 2008 | Georgia Institute of Technology, Atlanta, GA |
Area:
Mechanical Engineering, Condensed Matter PhysicsGoogle:
"Thomas Beechem"Parents
Sign in to add mentorSamuel Graham | grad student | 2008 | Georgia Tech | |
(Metrology of gallium nitride electronics using micro-Raman spectroscopy.) |
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Publications
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Hoglund ER, Bao DL, O'Hara A, et al. (2022) Emergent interface vibrational structure of oxide superlattices. Nature. 601: 556-561 |
Song Y, Perez C, Esteves G, et al. (2021) Thermal Conductivity of Aluminum Scandium Nitride for 5G Mobile Applications and Beyond. Acs Applied Materials & Interfaces |
Chatterjee B, Lundh JS, Song Y, et al. (2020) Interdependence of Electronic and Thermal Transport in AlxGa1–xN Channel HEMTs Ieee Electron Device Letters. 41: 461-464 |
Saltonstall CB, McClure ZD, Abere MJ, et al. (2020) Complexion dictated thermal resistance with interface density in reactive metal multilayers Physical Review B. 101: 245422 |
Goldflam MD, Ruiz I, Howell SW, et al. (2020) Monolithically fabricated tunable long-wave infrared detectors based on dynamic graphene metasurfaces Applied Physics Letters. 116: 191102 |
Chatterjee B, Dundar C, Beechem TE, et al. (2020) Nanoscale electro-thermal interactions in AlGaN/GaN high electron mobility transistors Journal of Applied Physics. 127: 44502 |
Lundh JS, Chatterjee B, Song Y, et al. (2019) Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor Applied Physics Letters. 115: 153503 |
Coleman K, Walker J, Beechem T, et al. (2019) Effect of stresses on the dielectric and piezoelectric properties of Pb(Zr0.52Ti0.48)O3 thin films Journal of Applied Physics. 126: 034101 |
DeCoster ME, Chen X, Zhang K, et al. (2019) Thermal Conductivity and Phonon Scattering Processes of ALD Grown PbTe–PbSe Thermoelectric Thin Films Advanced Functional Materials. 29: 1904073 |
Goldflam MD, Ruiz I, Howell SW, et al. (2018) Tunable dual-band graphene-based infrared reflectance filter. Optics Express. 26: 8532-8541 |