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Yang Yang grad student 1991 UMass Lowell (E-Tree)
Stephen A. Fossey grad student 2000 UMass Lowell
Soo-Hyoung Lee grad student 2000 UMass Lowell
Suizhou Yang grad student 2001 UMass Lowell
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Recatalà-Gómez J, Ng HK, Kumar P, et al. (2020) Thermoelectric Properties of Sub-stoichiometric Electron Beam Patterned Bismuth Sulfide. Acs Applied Materials & Interfaces
Kumar S, Kumar H, Vura S, et al. (2019) Investigation of Ta 2 O 5 as an Alternative High- ${k}$ Dielectric for InAlN/GaN MOS-HEMT on Si Ieee Transactions On Electron Devices. 66: 1230-1235
Zhuk S, Wong TKS, Tyukalova E, et al. (2019) Effect of TaN intermediate layer on the back contact reaction of sputter-deposited Cu poor Cu2ZnSnS4 and Mo Applied Surface Science. 471: 277-288
Liu H, Jin Y, Lin M, et al. (2018) Growth and in-plane undulations of GaAs/Ge superlattices on [001]-oriented Ge and GaAs substrates: formation of regular 3D island-in-network nanostructures Journal of Materials Chemistry C. 6: 13059-13068
Yeo RJ, Dwivedi N, Zhang L, et al. (2017) Superior wear resistance and low friction in hybrid ultrathin silicon nitride/carbon films: synergy of the interfacial chemistry and carbon microstructure. Nanoscale
Dwivedi N, Yeo RJ, Zhang Z, et al. (2017) Direct observation of thickness and foreign interlayer driven abrupt structural transformation in ultrathin carbon and hybrid silicon nitride/carbon films Carbon. 115: 701-719
Adamczyk L, Adkins JK, Agakishiev G, et al. (2016) Measurement of the Transverse Single-Spin Asymmetry in p^{↑}+p→W^{±}/Z^{0} at RHIC. Physical Review Letters. 116: 132301
Adamczyk L, Adkins JK, Agakishiev G, et al. (2016) Beam Energy Dependence of the Third Harmonic of Azimuthal Correlations in Au+Au Collisions at RHIC. Physical Review Letters. 116: 112302
Adamczyk L, Adkins JK, Agakishiev G, et al. (2016) Centrality and Transverse Momentum Dependence of Elliptic Flow of Multistrange Hadrons and ϕ Meson in Au+Au Collisions at sqrt[s_{NN}]=200  GeV. Physical Review Letters. 116: 062301
Partida-Manzanera T, Roberts JW, Bhat TN, et al. (2016) Comparative analysis of the effects of tantalum doping and annealing on atomic layer deposited (Ta2O5)x(Al2O3)1- x as potential gate dielectrics for GaN/AlxGa1-xN/GaN high electron mobility transistors Journal of Applied Physics. 119
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