Stephen J. Pearton
Affiliations: | University of Florida, Gainesville, Gainesville, FL, United States |
Area:
Materials Science Engineering, Polymer ChemistryWebsite:
https://mse.ufl.edu/people/mse-faculty/stephen-pearton/Google:
"Stephen J. Pearton"Bio:
http://pearton.mse.ufl.edu/
http://pearton.mse.ufl.edu/group/
http://pearton.mse.ufl.edu/cv/curriculum_vitae.pdf
Mean distance: (not calculated yet)
Parents
Sign in to add mentor| Alister James Tavendale | grad student | 1979-1981 | University of Tasmania (Physics Tree) | |
| (Deep level impurities in semiconductors for nuclear radiation detection) | ||||
Children
Sign in to add trainee| Donald S. Bitting | grad student | 2003 | UF Gainesville |
| Kyu-Pil Lee | grad student | 2003 | UF Gainesville |
| Kwang H. Baik | grad student | 2004 | UF Gainesville |
| Kelly P. Ip | grad student | 2005 | UF Gainesville |
| Lars F. Voss | grad student | 2008 | UF Gainesville |
| Wantae Lim | grad student | 2009 | UF Gainesville |
| Erica A. Douglas | grad student | 2011 | UF Gainesville |
| David J. Cheney | grad student | 2012 | UF Gainesville |
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Publications
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| Islam Z, Haque A, Glavin NR, et al. (2020) In Situ Transmission Electron Microscopy Observations of Forward Bias Degradation of Vertical Geometry β-Ga2O3 Rectifiers Ecs Journal of Solid State Science and Technology. 9: 55008 |
| Carey PH, Ren F, Bae J, et al. (2020) Proton Irradiation of High Aluminum Content AlGaN Polarization Doped Field Effect Transistors Ecs Journal of Solid State Science and Technology. 9: 25003 |
| CareyIV PH, Ren F, Armstrong AM, et al. (2020) High temperature operation to 500 °C of AlGaN graded polarization-doped field-effect transistors Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 38: 33202 |
| Pearton SJ, Douglas EA, Shul RJ, et al. (2020) Plasma etching of wide bandgap and ultrawide bandgap semiconductors Journal of Vacuum Science & Technology A. 38: 020802 |
| Islam Z, Xian M, Haque A, et al. (2020) In Situ Observation of β-Ga2O3 Schottky Diode Failure Under Forward Biasing Condition Ieee Transactions On Electron Devices. 67: 3056-3061 |
| Polyakov AY, Smirnov NB, Shchemerov IV, et al. (2020) Pulsed fast reactor neutron irradiation effects in Si doped n-type β-Ga2O3 Journal of Physics D. 53: 274001 |
| Modak S, Chernyak L, Xian M, et al. (2020) Impact of electron injection on carrier transport and recombination in unintentionally doped GaN Journal of Applied Physics. 128: 85702 |
| Baik KH, Jung S, Cho C, et al. (2020) AlGaN/GaN heterostructure based Pt nanonetwork Schottky diode with water-blocking layer Sensors and Actuators B-Chemical. 317: 128234 |
| Pearton SJ, Norton DP, Ip K, et al. (2020) Retraction notice to “Recent progress in processing and properties of ZnO” [Prog. Mater. Sci. 50(3) (2004) 293–340] Progress in Materials Science. 100669 |
| Polyakov AY, Haller C, Butté R, et al. (2020) Deep traps in InGaN/GaN single quantum well structures grown with and without InGaN underlayers Journal of Alloys and Compounds. 845: 156269 |