Nicholas C. Strandwitz, Ph.D.

Affiliations: 
Materials Science and Engineering Lehigh University, Bethlehem, PA, United States 
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SNBCP

Parents

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Galen Dean Stucky grad student 2004-2009 UC Santa Barbara
 (Catalysis with nanostructured solution-processed materials.)
Nathan Saul Lewis post-doc 2009-2012 Caltech
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Publications

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Xiong K, Zhang X, Li L, et al. (2020) Temperature-Dependent RF Characteristics of Al₂O₃-Passivated WSe₂ MOSFETs Ieee Electron Device Letters. 41: 1134-1137
Davis BE, Strandwitz NC. (2020) Aluminum Oxide Passivating Tunneling Interlayers for Molybdenum Oxide Hole-Selective Contacts Ieee Journal of Photovoltaics. 10: 722-728
Ogidi-Ekoko ON, Goodrich JC, Howzen AJ, et al. (2020) Electrical Properties of MgO/GaN Metal-Oxide-Semiconductor Structures Solid-State Electronics. 107881
Goodrich JC, Farinha TG, Ju L, et al. (2020) Surface pretreatment and deposition temperature dependence of MgO epitaxy on GaN by thermal atomic layer deposition Journal of Crystal Growth. 536: 125568
Kozen AC, Sowa MJ, Ju L, et al. (2019) Plasma-enhanced atomic layer deposition of vanadium nitride Journal of Vacuum Science & Technology A. 37: 061505
Ju L, Vemuri V, Strandwitz NC. (2019) Quartz crystal microbalance study of precursor diffusion during molecular layer deposition using cyclic azasilane, maleic anhydride, and water Journal of Vacuum Science and Technology. 37: 30909
Sowa MJ, Ju L, Kozen AC, et al. (2018) Plasma-enhanced atomic layer deposition of titanium vanadium nitride Journal of Vacuum Science & Technology A. 36: 06A103
Li L, Xiong K, Marstell RJ, et al. (2018) Wafer-Scale Fabrication of Recessed-Channel PtSe2 MOSFETs With Low Contact Resistance and Improved Gate Control Ieee Transactions On Electron Devices. 65: 4102-4108
Xiong K, Kim H, Marstell RJ, et al. (2018) CMOS-compatible batch processing of monolayer MoS2MOSFETs Journal of Physics D: Applied Physics. 51: 15LT02
Marstell RJ, Pugliese A, Strandwitz NC. (2018) Absence of Evidence for Fixed Charge in Metal-Aluminum Oxide-Silicon Tunnel Diodes Physica Status Solidi (B). 256: 1800342
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