Ulrich Gösele, Ph.D.
Affiliations: | Max Planck Institute of Microstructure Physics |
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"Ulrich Gösele"Mean distance: 8.84 | S | N | B | C | P |
Children
Sign in to add trainee| Jinsub Choi | grad student | (E-Tree) | |
| Kornelius Nielsch | grad student | 2002 | University of Stuttgart |
| Julien Bachmann | post-doc | 2006-2007 | Max Planck Institute of Microstructure Physics |
| Oussama Moutanabbir | post-doc | 2007-2009 | Ecole Polytechnique de Montréal |
| Marin Alexe | research scientist | Max Planck Institute of Microstructure Physics |
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Publications
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| Reiche M, Moutanabbir O, Hoentschel J, et al. (2011) Strained Silicon Nanodevices Mechanical Stress On the Nanoscale: Simulation, Material Systems and Characterization Techniques. 131-150 |
| Lee J, Berger A, Cagnon L, et al. (2010) Disproportionation of thermoelectric bismuth telluride nanowires as a result of the annealing process. Physical Chemistry Chemical Physics : Pccp. 12: 15247-50 |
| Yang RB, Zakharov N, Moutanabbir O, et al. (2010) The transition between conformal atomic layer epitaxy and nanowire growth. Journal of the American Chemical Society. 132: 7592-4 |
| Qin Y, Kim Y, Zhang L, et al. (2010) Preparation and elastic properties of helical nanotubes obtained by atomic layer deposition with carbon nanocoils as templates Small. 6: 910-914 |
| Moutanabbir O, Reiche M, Hähnel A, et al. (2010) Nanoscale patterning induced strain redistribution in ultrathin strained Si layers on oxide. Nanotechnology. 21: 134013 |
| Moutanabbir O, Gösele U. (2010) Heterogeneous integration of compound semiconductors Annual Review of Materials Research. 40: 469-500 |
| Moutanabbir O, Scholz R, Gösele U, et al. (2010) Experimental elucidation of vacancy complexes associated with hydrogen ion-induced splitting of bulk GaN Physical Review B - Condensed Matter and Materials Physics. 81 |
| Moutanabbir O, Reiche M, Hähnel A, et al. (2010) Nanoscale patterning induced strain redistribution in ultrathin strained Si layers on oxide Nanotechnology. 21 |
| Lee J, Berger A, Cagnon L, et al. (2010) Disproportionation of thermoelectric bismuth telluride nanowires as a result of the annealing process Physical Chemistry Chemical Physics. 12: 15247-15250 |
| Yang RB, Zakharov N, Moutanabbir O, et al. (2010) The transition between conformal atomic layer epitaxy and nanowire growth Journal of the American Chemical Society. 132: 7592-7594 |