Fan Ren
Affiliations: | Chemical Engineering | University of Florida, Gainesville, Gainesville, FL, United States | |
| 1985 | Polymer Science and Engineering | Polytechnic Institute of Brooklyn, Brooklyn, New York, United States | |
| 1991 | Inorganic Chemistry | Polytechnic Institute of Brooklyn, Brooklyn, New York, United States |
Website:
http://ww2.che.ufl.edu/ren/Google:
"Fan Ren"Mean distance: (not calculated yet)
Children
Sign in to add trainee| An-Ping Zhang | grad student | 2001 | UF Gainesville |
| Jihyun Kim | grad student | 2004 | UF Gainesville |
| Soohwan Jang | grad student | 2007 | UF Gainesville |
| Hung Ta Wang | grad student | 2008 | UF Gainesville |
| Yu-Lin Wang | grad student | 2009 | UF Gainesville (E-Tree) |
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Publications
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| Lee G, Baek JH, Ren F, et al. (2021) Artificial Neuron and Synapse Devices Based on 2D Materials. Small (Weinheim An Der Bergstrasse, Germany). e2100640 |
| Fares C, Elhassani R, Partain J, et al. (2020) Annealing and N Plasma Treatment to Minimize Corrosion of SiC-Coated Glass-Ceramics. Materials (Basel, Switzerland). 13 |
| Afonso Camargo SE, Mohiuddeen AS, Fares C, et al. (2020) Anti-Bacterial Properties and Biocompatibility of Novel SiC Coating for Dental Ceramic. Journal of Functional Biomaterials. 11 |
| Islam Z, Haque A, Glavin NR, et al. (2020) In Situ Transmission Electron Microscopy Observations of Forward Bias Degradation of Vertical Geometry β-Ga2O3 Rectifiers Ecs Journal of Solid State Science and Technology. 9: 55008 |
| Carey PH, Ren F, Bae J, et al. (2020) Alpha Particle Irradiation of High Aluminum Content AlGan Polarization Doped Field Effect Transistors Ecs Journal of Solid State Science and Technology. 9: 35008 |
| Carey PH, Ren F, Bae J, et al. (2020) Proton Irradiation of High Aluminum Content AlGaN Polarization Doped Field Effect Transistors Ecs Journal of Solid State Science and Technology. 9: 25003 |
| CareyIV PH, Ren F, Armstrong AM, et al. (2020) High temperature operation to 500 °C of AlGaN graded polarization-doped field-effect transistors Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 38: 33202 |
| Islam Z, Xian M, Haque A, et al. (2020) In Situ Observation of β-Ga2O3 Schottky Diode Failure Under Forward Biasing Condition Ieee Transactions On Electron Devices. 67: 3056-3061 |
| Polyakov AY, Smirnov NB, Shchemerov IV, et al. (2020) Pulsed fast reactor neutron irradiation effects in Si doped n-type β-Ga2O3 Journal of Physics D. 53: 274001 |
| Modak S, Chernyak L, Xian M, et al. (2020) Impact of electron injection on carrier transport and recombination in unintentionally doped GaN Journal of Applied Physics. 128: 85702 |