William A. Tiller
Affiliations: | Materials Science and Engineering | Stanford University, Palo Alto, CA |
Website:
http://engineering.stanford.edu/profile/07098155Google:
"William A. Tiller"Bio:
http://en.wikipedia.org/wiki/William_A._Tiller
Mean distance: 11.09 | S | N | B | C | P |
Parents
Sign in to add mentor| Bruce Chalmers | grad student | 1955 | University of Toronto | |
| (Effect of growth conditions upon the solidification of a binary alloy) | ||||
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Publications
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| Tiller WA, Friedman M, Shaw R, et al. (1998) Grown-in point defects and microscopic defect formation in CZ silicon: I. The one-dimensional, steady-state approximation Journal of Crystal Growth. 186: 113-127 |
| Cuendet N, Halicioglu T, Tiller WA. (1995) Energetics of microvoid formation in Si from supersaturated vacancies Applied Physics Letters. 67: 1063 |
| Uda S, Tiller WA. (1995) Microbubble formation during crystallization of LiNbO3 melts Journal of Crystal Growth. 152: 79-86 |
| Ungar PJ, Takai T, Halicioglu T, et al. (1993) Point defect structures and energetics in Si using an empirical potential Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 11: 224-230 |
| Tiller WA, Uda S. (1993) Intrinsic LiNbO3 melt species partitioning at the congruent melt composition II. Dynamic interface case Journal of Crystal Growth. 129: 341-361 |
| Uda S, Tiller WA. (1993) Cr migration associated with interface electric fields during transient LiNbO3 crystal growth Journal of Crystal Growth. 126: 396-412 |
| Tiller WA. (1992) Fundamental aspects of film nucleation and growth in chemical vapor deposition Surface and Coatings Technology. 54: 211-218 |
| Uda S, Tiller WA. (1992) The influence of an interface electric field on the distribution coefficient of chromium in LiNbO3 Journal of Crystal Growth. 121: 93-110 |
| Yen CT, Tiller WA. (1992) Incorporating convection into one-dimensional solute redistribution during crystal growth from the melt I. The steady-state solution Journal of Crystal Growth. 118: 259-267 |
| Yen CT, Tiller WA. (1992) Oxygen partitioning analysis during Czochralski silicon crystal growth via a dopant marker and a simple transfer function modeling technique II. Growth velocity and applied magnetic field transients Journal of Crystal Growth. 118: 85-92 |