Marko Burghard - Publications

Affiliations: 
Nanosciences Max-Planck-Institute for Solid State Research 

160 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2023 Niu W, Sopp S, Lodi A, Gee A, Kong F, Pei T, Gehring P, Nägele J, Lau CS, Ma J, Liu J, Narita A, Mol J, Burghard M, Müllen K, et al. Exceptionally clean single-electron transistors from solutions of molecular graphene nanoribbons. Nature Materials. 22: 180-185. PMID 36732344 DOI: 10.1038/s41563-022-01460-6  0.316
2020 Vats N, Wang Y, Sen S, Szilagyi S, Ochner H, Abb S, Burghard M, Sigle W, Kern K, van Aken PA, Rauschenbach S. Substrate-Selective Morphology of Caesium-Iodide Clusters on Graphene. Acs Nano. PMID 32283013 DOI: 10.1021/Acsnano.9B10053  0.351
2019 Mashhadi S, Kim Y, Kim J, Weber D, Taniguchi T, Watanabe K, Park N, Lotsch B, Smet JH, Burghard M, Kern K. Spin-Split Band Hybridization in Graphene Proximitized with α-RuCl Nanosheets. Nano Letters. PMID 31241971 DOI: 10.1021/Acs.Nanolett.9B01691  0.551
2019 Na J, Kim Y, Smet JH, Burghard M, Kern K. Gate-Tunable Tunneling Transistor Based on a Thin Black Phosphorus-SnSe Heterostructure. Acs Applied Materials & Interfaces. PMID 31145585 DOI: 10.1021/Acsami.9B02589  0.339
2019 Scavuzzo A, Mangel S, Park J, Lee S, Loc Duong D, Strelow C, Mews A, Burghard M, Kern K. Electrically tunable quantum emitters in an ultrathin graphene–hexagonal boron nitride van der Waals heterostructure Applied Physics Letters. 114: 062104. DOI: 10.1063/1.5067385  0.352
2018 Mashhadi S, Weber D, Schoop LM, Schulz A, Lotsch BV, Burghard M, Kern K. Electrical Transport Signature of the Magnetic Fluctuation-Structure Relation in α-RuCl Nanoflakes. Nano Letters. PMID 29635914 DOI: 10.1021/Acs.Nanolett.8B00926  0.547
2018 Vats N, Rauschenbach S, Sigle W, Sen S, Abb S, Portz A, Dürr M, Burghard M, van Aken PA, Kern K. Electron microscopy of polyoxometalate ions on graphene by electrospray ion beam deposition. Nanoscale. PMID 29485651 DOI: 10.1039/C8Nr00402A  0.367
2017 Ko S, Na J, Moon YS, Zschieschang U, Acharya R, Klauk H, Kim GT, Burghard M, Kern K. Few-Layer WSe2 Schottky Junction-Based Photovoltaic Devices through Site-Selective Dual Doping. Acs Applied Materials & Interfaces. 9: 42912-42918. PMID 29200255 DOI: 10.1021/Acsami.7B13395  0.34
2017 Mashhadi S, Duong DL, Burghard M, Kern K. Efficient Photothermoelectric Conversion in Lateral Topological Insulator Heterojunctions. Nano Letters. 17: 214-219. PMID 28073269 DOI: 10.1021/Acs.Nanolett.6B03851  0.338
2016 Na J, Hoyer A, Schoop L, Weber D, Lotsch BV, Burghard M, Kern K. Tuning the magnetoresistance of ultrathin WTe2 sheets by electrostatic gating. Nanoscale. PMID 27786318 DOI: 10.1039/C6Nr06327F  0.57
2016 Urcuyo R, Duong DL, Sailer P, Burghard M, Kern K. Hot Carrier Extraction from Multilayer Graphene. Nano Letters. 16: 6761-6766. PMID 27696882 DOI: 10.1021/Acs.Nanolett.6B02354  0.373
2016 Devender, Gehring P, Gaul A, Hoyer A, Vaklinova K, Mehta RJ, Burghard M, Borca-Tasciuc T, Singh DJ, Kern K, Ramanath G. Harnessing Topological Band Effects in Bismuth Telluride Selenide for Large Enhancements in Thermoelectric Properties through Isovalent Doping. Advanced Materials (Deerfield Beach, Fla.). PMID 27167512 DOI: 10.1002/Adma.201601256  0.342
2015 Konnerth R, Cervetti C, Narita A, Feng X, Müllen K, Hoyer A, Burghard M, Kern K, Dressel M, Bogani L. Tuning the deposition of molecular graphene nanoribbons by surface functionalization. Nanoscale. PMID 26051658 DOI: 10.1039/C4Nr07378A  0.321
2015 Cervetti C, Heintze E, Gorshunov B, Zhukova E, Lobanov S, Hoyer A, Burghard M, Kern K, Dressel M, Bogani L. Sub-terahertz frequency-domain spectroscopy reveals single-grain mobility and scatter influence of large-area graphene. Advanced Materials (Deerfield Beach, Fla.). 27: 2635-41. PMID 25787669 DOI: 10.1002/Adma.201500599  0.332
2015 Gehring P, Urcuyo R, Duong DL, Burghard M, Kern K. Thin-layer black phosphorus/GaAs heterojunction p-n diodes Applied Physics Letters. 106: 233110. DOI: 10.1063/1.4922531  0.321
2015 Cervetti C, Heintze E, Gorshunov B, Zhukova E, Lobanov S, Hoyer A, Burghard M, Kern K, Dressel M, Bogani L. Graphene: Sub‐Terahertz Frequency‐Domain Spectroscopy Reveals Single‐Grain Mobility and Scatter Influence of Large‐Area Graphene (Adv. Mater. 16/2015) Advanced Materials. 27: 2676-2676. DOI: 10.1002/Adma.201570111  0.311
2014 Dubey G, Urcuyo R, Abb S, Rinke G, Burghard M, Rauschenbach S, Kern K. Chemical modification of graphene via hyperthermal molecular reaction. Journal of the American Chemical Society. 136: 13482-5. PMID 25185758 DOI: 10.1021/Ja5046499  0.33
2014 Peters EC, Giesbers AJM, Burghard M, Kern K. Scaling in the quantum Hall regime of graphene Corbino devices Applied Physics Letters. 104: 203109. DOI: 10.1063/1.4878396  0.347
2014 Kumar A, Peters EC, Burghard M. Self-assembled magnetic nanoparticles of Prussian blue on graphene Rsc Adv.. 4: 18061-18064. DOI: 10.1039/C4Ra01079E  0.308
2013 Giesbers AJM, Uhlířová K, Konečný M, Peters EC, Burghard M, Aarts J, Flipse CFJ. Interface-induced room-temperature ferromagnetism in hydrogenated epitaxial graphene Physical Review Letters. 111: 166101. PMID 24182283 DOI: 10.1103/Physrevlett.111.166101  0.338
2013 Gehring P, Benia HM, Weng Y, Dinnebier R, Ast CR, Burghard M, Kern K. A Natural Topological Insulator Nano Letters. 13: 1179-1184. PMID 23438015 DOI: 10.1021/Nl304583M  0.367
2013 Peters E, Giesbers AJ, Zeitler U, Burghard M, Kern K. Valley-polarized massive charge carriers in gapped graphene Physical Review B. 87: 201403. DOI: 10.1103/Physrevb.87.201403  0.343
2013 Stützel EU, Dufaux T, Sagar A, Rauschenbach S, Balasubramanian K, Burghard M, Kern K. Spatially resolved photocurrents in graphene nanoribbon devices Applied Physics Letters. 102: 43106. DOI: 10.1063/1.4789850  0.375
2013 Horváth L, Magrez A, Burghard M, Kern K, Forró L, Schwaller B. Evaluation of the toxicity of graphene derivatives on cells of the lung luminal surface Carbon. 64: 45-60. DOI: 10.1016/J.Carbon.2013.07.005  0.332
2012 Gehring P, Gao BF, Burghard M, Kern K. Growth of high-mobility Bi2Te2Se nanoplatelets on hBN sheets by van der Waals epitaxy. Nano Letters. 12: 5137-42. PMID 22985022 DOI: 10.1021/Nl3019802  0.352
2012 Burghard M, Mews A. High-resolution photocurrent mapping of carbon nanostructures. Acs Nano. 6: 5752-6. PMID 22779806 DOI: 10.1021/Nn3029088  0.374
2012 Dufaux T, Burghard M, Kern K. Efficient charge extraction out of nanoscale Schottky contacts to CdS nanowires. Nano Letters. 12: 2705-9. PMID 22571637 DOI: 10.1021/Nl204193Y  0.333
2012 Balasubramanian K, Kurkina T, Ahmad A, Burghard M, Kern K. Tuning the functional interface of carbon nanotubes by electrochemistry: Toward nanoscale chemical sensors and biosensors Journal of Materials Research. 27: 391-402. DOI: 10.1557/Jmr.2011.410  0.331
2012 Giesbers AJ, Peters E, Burghard M, Kern K. Charge transport gap in graphene antidot lattices Physical Review B. 86: 1-6. DOI: 10.1103/Physrevb.86.045445  0.366
2012 Gehring P, Gao B, Burghard M, Kern K. Two-dimensional magnetotransport in Bi2Te2Se nanoplatelets Applied Physics Letters. 101: 23116. DOI: 10.1063/1.4736404  0.339
2012 Sagar A, Balasubramanian K, Burghard M, Kern K. Electric field effect in graphite crystallites Applied Physics Letters. 100. DOI: 10.1063/1.4719204  0.36
2012 Gao BF, Gehring P, Burghard M, Kern K. Gate-controlled linear magnetoresistance in thin Bi2Se3 sheets Applied Physics Letters. 100: 212402. DOI: 10.1063/1.4719196  0.324
2012 Borchert H, Witt F, Chanaewa A, Werner F, Dorn J, Dufaux T, Kruszynska M, Jandke A, Höltig M, Alfere T, Böttcher J, Gimmler C, Klinke C, Burghard M, Mews A, et al. Vertically oriented carbon nanostructures and their application potential for polymer-based solar cells Journal of Physical Chemistry C. 116: 412-419. DOI: 10.1021/Jp2095592  0.381
2012 Peters EC, Giesbers AJM, Burghard M. Variable range hopping in graphene antidot lattices Physica Status Solidi B-Basic Solid State Physics. 249: 2522-2525. DOI: 10.1002/Pssb.201200177  0.351
2011 Sundaram RS, Steiner M, Chiu HY, Engel M, Bol AA, Krupke R, Burghard M, Kern K, Avouris P. The graphene-gold interface and its implications for nanoelectronics. Nano Letters. 11: 3833-7. PMID 21809874 DOI: 10.1021/Nl201907U  0.372
2011 Lutz T, Kabakchiev A, Dufaux T, Wolpert C, Wang Z, Burghard M, Kuhnke K, Kern K. Scanning tunneling luminescence of individual CdSe nanowires. Small (Weinheim An Der Bergstrasse, Germany). 7: 2396-400. PMID 21678550 DOI: 10.1002/Smll.201100434  0.313
2011 Sagar A, Balasubramanian K, Burghard M, Kern K, Sordan R. Polymer-electrolyte gated graphene transistors for analog and digital phase detection Applied Physics Letters. 99: 43307. DOI: 10.1063/1.3615247  0.338
2011 Shopova-Gospodinova D, Burghard Z, Dufaux T, Burghard M, Bill J. Mechanical and electrical properties of polymer-derived Si–C–N ceramics reinforced by octadecylamine – Modified single-wall carbon nanotubes Composites Science and Technology. 71: 931-937. DOI: 10.1016/J.Compscitech.2011.02.013  0.369
2011 Pacilé D, Meyer JC, Rodríguez AF, Papagno M, Gómez-Navarro C, Sundaram RS, Burghard M, Kern K, Carbone C, Kaiser U. Electronic properties and atomic structure of graphene oxide membranes Carbon. 49: 966-972. DOI: 10.1016/J.Carbon.2010.09.063  0.358
2010 Stützel EU, Burghard M, Kern K, Traversi F, Nichele F, Sordan R. A graphene nanoribbon memory cell. Small (Weinheim An Der Bergstrasse, Germany). 6: 2822-5. PMID 20949540 DOI: 10.1002/Smll.201000854  0.339
2010 Nunes A, Amsharov N, Guo C, Van den Bossche J, Santhosh P, Karachalios TK, Nitodas SF, Burghard M, Kostarelos K, Al-Jamal KT. Hybrid polymer-grafted multiwalled carbon nanotubes for in vitro gene delivery. Small (Weinheim An Der Bergstrasse, Germany). 6: 2281-91. PMID 20878655 DOI: 10.1002/Smll.201000864  0.3
2010 Dufaux T, Boettcher J, Burghard M, Kern K. Photocurrent distribution in graphene-CdS nanowire devices. Small (Weinheim An Der Bergstrasse, Germany). 6: 1868-72. PMID 20683864 DOI: 10.1002/Smll.201000950  0.314
2010 Lee EJ, Zhi L, Burghard M, Müllen K, Kern K. Electrical properties and photoconductivity of stacked-graphene carbon nanotubes. Advanced Materials (Deerfield Beach, Fla.). 22: 1854-7. PMID 20512961 DOI: 10.1002/Adma.200903462  0.444
2010 Gómez-Navarro C, Meyer JC, Sundaram RS, Chuvilin A, Kurasch S, Burghard M, Kern K, Kaiser U. Atomic structure of reduced graphene oxide. Nano Letters. 10: 1144-8. PMID 20199057 DOI: 10.1021/Nl9031617  0.352
2010 Fu N, Li Z, Myalitsin A, Scolari M, Weitz RT, Burghard M, Mews A. One-dimensional heterostructures of single-walled carbon nanotubes and CdSe nanowires. Small (Weinheim An Der Bergstrasse, Germany). 6: 376-80. PMID 20025078 DOI: 10.1002/Smll.200901366  0.405
2010 Peters EC, Lee EJH, Burghard M, Kern K. Gate dependent photocurrents at a graphene p-n junction Applied Physics Letters. 97: 193102. DOI: 10.1063/1.3505926  0.364
2010 Dufaux T, Dorfmüller J, Vogelgesang R, Burghard M, Kern K. Surface plasmon coupling to nanoscale Schottky-type electrical detectors Applied Physics Letters. 97: 161110. DOI: 10.1063/1.3503534  0.309
2009 Atanasova P, Weitz RT, Gerstel P, Srot V, Kopold P, van Aken PA, Burghard M, Bill J. DNA-templated synthesis of ZnO thin layers and nanowires. Nanotechnology. 20: 365302. PMID 19687540 DOI: 10.1088/0957-4484/20/36/365302  0.328
2009 Sagar A, Lee EJ, Balasubramanian K, Burghard M, Kern K. Effect of stacking order on the electric-field induced carrier modulation in graphene bilayers. Nano Letters. 9: 3124-8. PMID 19645421 DOI: 10.1021/Nl9012002  0.383
2009 Weitz RT, Zschieschang U, Forment-Aliaga A, Kälblein D, Burghard M, Kern K, Klauk H. Highly reliable carbon nanotube transistors with patterned gates and molecular gate dielectric. Nano Letters. 9: 1335-40. PMID 19351189 DOI: 10.1021/Nl802982M  0.368
2009 Kaiser AB, Gómez-Navarro C, Sundaram RS, Burghard M, Kern K. Electrical conduction mechanism in chemically derived graphene monolayers. Nano Letters. 9: 1787-92. PMID 19331348 DOI: 10.1021/Nl803698B  0.371
2009 Sundaram RS, Gomez-Navarro C, Lee EJH, Burghard M, Kern K. Noninvasive metal contacts in chemically derived graphene devices Applied Physics Letters. 95: 223507. DOI: 10.1063/1.3270533  0.382
2009 Weitz RT, Amsharov K, Zschieschang U, Burghard M, Jansen M, Kelsch M, Rhamati B, Aken PAv, Kern K, Klauk H. The Importance of Grain Boundaries for the Time-Dependent Mobility Degradation in Organic Thin-Film Transistors Chemistry of Materials. 21: 4949-4954. DOI: 10.1021/Cm902145X  0.304
2009 López V, Sundaram RS, Gómez-Navarro C, Olea D, Burghard M, Gómez-Herrero J, Zamora F, Kern K. Graphene Monolayers: Chemical Vapor Deposition Repair of Graphene Oxide: A Route to Highly‐Conductive Graphene Monolayers (Adv. Mater. 46/2009) Advanced Materials. 21. DOI: 10.1002/Adma.200990172  0.315
2009 López V, Sundaram RS, Gómez‐Navarro C, Olea D, Burghard M, Gómez‐Herrero J, Zamora F, Kern K. Chemical Vapor Deposition Repair of Graphene Oxide: A Route to Highly‐Conductive Graphene Monolayers Advanced Materials. 21: 4683-4686. DOI: 10.1002/Adma.200901582  0.34
2009 Burghard M, Klauk H, Kern K. Carbon‐Based Field‐Effect Transistors for Nanoelectronics Advanced Materials. 21: 2586-2600. DOI: 10.1002/Adma.200803582  0.386
2009 Lee EJH, Balasubramanian K, Burghard M, Kern K. Spatially Resolved Potential Distribution in Carbon Nanotube Cross-Junction Devices Advanced Materials. 21: 2720-2724. DOI: 10.1002/Adma.200803545  0.399
2008 Forment-Aliaga A, Weitz RT, Sagar AS, Lee EJ, Konuma M, Burghard M, Kern K. Strong p-type doping of individual carbon nanotubes by Prussian blue functionalization. Small (Weinheim An Der Bergstrasse, Germany). 4: 1671-5. PMID 18770508 DOI: 10.1002/Smll.200800803  0.427
2008 Lee EJ, Balasubramanian K, Weitz RT, Burghard M, Kern K. Contact and edge effects in graphene devices. Nature Nanotechnology. 3: 486-90. PMID 18685636 DOI: 10.1038/Nnano.2008.172  0.366
2008 Gómez-Navarro C, Burghard M, Kern K. Elastic properties of chemically derived single graphene sheets. Nano Letters. 8: 2045-9. PMID 18540659 DOI: 10.1021/Nl801384Y  0.355
2008 Balasubramanian K, Burghard M, Kern K. Effect of the electronic structure of carbon nanotubes on the selectivity of electrochemical functionalization. Physical Chemistry Chemical Physics : Pccp. 10: 2256-62. PMID 18404234 DOI: 10.1039/B718626F  0.398
2008 Weitz RT, Amsharov K, Zschieschang U, Villas EB, Goswami DK, Burghard M, Dosch H, Jansen M, Kern K, Klauk H. Organic n-channel transistors based on core-cyanated perylene carboxylic diimide derivatives. Journal of the American Chemical Society. 130: 4637-45. PMID 18336020 DOI: 10.1021/Ja074675E  0.302
2008 Fernandez L, Li Y, Burghard M, Burghard Z, Gerstel P, Bill J, Aldinger F. Dispersion of Carbon Nanotubes in Polysilazanes for the Preparation of Reinforced Si-C-N Composites Key Engineering Materials. 403: 231-234. DOI: 10.4028/Www.Scientific.Net/Kem.403.231  0.347
2008 Häffner M, Heeren A, Haug A, Schuster E, Sagar A, Fleischer M, Peisert H, Burghard M, Chassé T, Kern DP. Catalyst patterning for carbon nanotube growth on elevating posts by self-aligned double-layer electron beam lithography Journal of Vacuum Science & Technology B. 26: 2447-2450. DOI: 10.1116/1.2991516  0.353
2008 Balasubramanian K, Burghard M. Electrochemically functionalized carbon nanotubes for device applications Journal of Materials Chemistry. 18: 3071-3083. DOI: 10.1039/B718262G  0.404
2008 Scolari M, Mews A, Fu N, Myalitsin A, Assmus T, Balasubramanian K, Burghard M, Kern K. Surface enhanced Raman scattering of carbon nanotubes decorated by individual fluorescent gold particles Journal of Physical Chemistry C. 112: 391-396. DOI: 10.1021/Jp076190I  0.329
2008 Li Y, Fernandez-Recio L, Gerstel P, Srot V, Aken PAv, Kaiser G, Burghard M, Bill J. Chemical modification of single-walled carbon nanotubes for the reinforcement of precursor-derived ceramics Chemistry of Materials. 20: 5593-5599. DOI: 10.1021/Cm801125K  0.377
2008 Häffner M, Haug A, Weitz RT, Fleischer M, Burghard M, Peisert H, Chassé T, Kern DP. E-beam lithography of catalyst patterns for carbon nanotube growth on insulating substrates Microelectronic Engineering. 85: 768-773. DOI: 10.1016/J.Mee.2008.01.046  0.361
2008 Balasubramanian K, Lee EJH, Weitz RT, Burghard M, Kern K. Carbon nanotube transistors - chemical functionalization and device characterization Physica Status Solidi (a). 205: 633-646. DOI: 10.1002/Pssa.200723410  0.395
2008 Sundaram RS, Gómez-Navarro C, Balasubramanian K, Burghard M, Kern K. Electrochemical Modification of Graphene Advanced Materials. 20: 3050-3053. DOI: 10.1002/Adma.200800198  0.331
2007 Lee EJ, Balasubramanian K, Dorfmüller J, Vogelgesang R, Fu N, Mews A, Burghard M, Kern K. Electronic-band-structure mapping of nanotube transistors by scanning photocurrent microscopy. Small (Weinheim An Der Bergstrasse, Germany). 3: 2038-42. PMID 18030672 DOI: 10.1002/Smll.200700418  0.411
2007 Gómez-Navarro C, Weitz RT, Bittner AM, Scolari M, Mews A, Burghard M, Kern K. Electronic transport properties of individual chemically reduced graphene oxide sheets. Nano Letters. 7: 3499-503. PMID 17944526 DOI: 10.1021/Nl072090C  0.395
2007 Weitz RT, Zschieschang U, Effenberger F, Klauk H, Burghard M, Kern K. High-performance carbon nanotube field effect transistors with a thin gate dielectric based on a self-assembled monolayer. Nano Letters. 7: 22-7. PMID 17212434 DOI: 10.1021/Nl061534M  0.412
2007 Maroto A, Balasubramanian K, Burghard M, Kern K. Functionalized metallic carbon nanotube devices for pH sensing. Chemphyschem : a European Journal of Chemical Physics and Physical Chemistry. 8: 220-3. PMID 17183603 DOI: 10.1002/Cphc.200600498  0.361
2007 Assmus T, Balasubramanian K, Burghard M, Kern K, Scolari M, Fu N, Myalitsin A, Mews A. Raman properties of gold nanoparticle-decorated individual carbon nanotubes Applied Physics Letters. 90. DOI: 10.1063/1.2731662  0.329
2007 Schlecht U, Balasubramanian K, Burghard M, Kern K. Electrochemically decorated carbon nanotubes for hydrogen sensing Applied Surface Science. 253: 8394-8397. DOI: 10.1016/J.Apsusc.2007.04.004  0.373
2007 Burghard M, Maroto A, Balasubramanian K, Assmus T, Forment-Aliaga A, Lee EJH, Weitz RT, Scolari M, Nan F, Mews A, Kern K. Electrochemically modified single-walled carbon nanotubes Physica Status Solidi (B) Basic Research. 244: 4021-4025. DOI: 10.1002/Pssb.200776102  0.377
2006 Balasubramanian K, Burghard M. Biosensors based on carbon nanotubes. Analytical and Bioanalytical Chemistry. 385: 452-68. PMID 16568294 DOI: 10.1007/S00216-006-0314-8  0.384
2006 Balasubramanian K, Burghard M. Charge transport through carbon nanotubes interacting with light Semiconductor Science and Technology. 21. DOI: 10.1088/0268-1242/21/11/S04  0.425
2006 Sordan R, Balasubramanian K, Burghard M, Kern K. Exclusive-OR gate with a single carbon nanotube Applied Physics Letters. 88: 53119-53121. DOI: 10.1063/1.2171474  0.386
2006 Weitz RT, Zschieschang U, Klauk H, Burghard M, Kern K. Single‐walled carbon nanotube transistors on an ultra‐thin gate dielectric Physica Status Solidi B-Basic Solid State Physics. 243: 3394-3398. DOI: 10.1002/Pssb.200669133  0.412
2005 Balasubramanian K, Burghard M. Chemically functionalized carbon nanotubes. Small (Weinheim An Der Bergstrasse, Germany). 1: 180-92. PMID 17193428 DOI: 10.1002/Smll.200400118  0.399
2005 Burghard M. Asymmetric end-functionalization of carbon nanotubes. Small (Weinheim An Der Bergstrasse, Germany). 1: 1148-50. PMID 17193408 DOI: 10.1002/Smll.200500257  0.382
2005 Balasubramanian K, Burghard M, Kern K, Scolari M, Mews A. Photocurrent imaging of charge transport barriers in carbon nanotube devices. Nano Letters. 5: 507-10. PMID 15755103 DOI: 10.1021/Nl050053K  0.427
2005 Sordan R, Balasubramanian K, Burghard M, Kern K. Coulomb blockade phenomena in electromigration break junctions Applied Physics Letters. 87: 13106-13109. DOI: 10.1063/1.1991988  0.382
2005 Burghard M. Electronic and vibrational properties of chemically modified single-wall carbon nanotubes Surface Science Reports. 58: 1-109. DOI: 10.1016/J.Surfrep.2005.07.001  0.379
2005 Raible I, Burghard M, Schlecht U, Yasuda A, Vossmeyer T. V2O5 nanofibres: novel gas sensors with extremely high sensitivity and selectivity to amines Sensors and Actuators B-Chemical. 106: 730-735. DOI: 10.1016/J.Snb.2004.09.024  0.302
2005 Paredes JI, Burghard M, Martínez-Alonso A, Tascón JMD. Graphitization of carbon nanofibers: visualizing the structural evolution on the nanometer and atomic scales by scanning tunneling microscopy Applied Physics A. 80: 675-682. DOI: 10.1007/S00339-004-3109-9  0.321
2005 Balasubramanian K, Burghard M. Funktionalisierte Kohlenstoff‐Nanoröhren: Nanozylinder mit hohem Anwendungspotential Chemie in Unserer Zeit. 39: 16-25. DOI: 10.1002/Ciuz.200400337  0.368
2004 Paredes JI, Burghard M. Dispersions of Individual Single-Walled Carbon Nanotubes of High Length Langmuir. 20: 5149-5152. PMID 15984283 DOI: 10.1021/La049831Z  0.391
2004 Vitali L, Burghard M, Schneider MA, Liu L, Wu SY, Jayanthi CS, Kern K. Phonon Spectromicroscopy of Carbon Nanostructures with Atomic Resolution Physical Review Letters. 93: 136103. PMID 15524739 DOI: 10.1103/Physrevlett.93.136103  0.404
2004 Balasubramanian K, Fan Y, Burghard M, Kern K, Friedrich M, Wannek U, Mews A. Photoelectronic transport imaging of individual semiconducting carbon nanotubes Applied Physics Letters. 84: 2400-2402. DOI: 10.1063/1.1688451  0.41
2004 Balasubramanian K, Sordan R, Burghard M, Kern K. A Selective Electrochemical Approach to Carbon Nanotube Field-Effect Transistors Nano Letters. 4: 827-830. DOI: 10.1021/Nl049806D  0.412
2004 Schlecht U, Knez M, Duppel V, Kienle L, Burghard M. Boomerang-shaped VOX belts: Twinning within isolated nanocrystals Applied Physics a: Materials Science and Processing. 78: 527-529. DOI: 10.1007/S00339-003-2383-2  0.302
2003 Burghard M. Carbon nanotubes by quantitative solid-state conversion of an organometallic precursor. Angewandte Chemie (International Ed. in English). 42: 5929-30. PMID 14679539 DOI: 10.1002/Anie.200301705  0.348
2003 Krstić V, Roth S, Burghard M, Weis J, Kern K. Suppression of superconductor quasiparticle tunneling into single-walled carbon nanotubes Physical Review B. 68. DOI: 10.1103/Physrevb.68.205402  0.402
2003 Gómez-Navarro C, Pablo PJd, Colchero J, Fan Y, Burghard M, Gómez-Herrero J, Baró AM. Probing electrical transport in nanowires: current maps of individual V2O5 nanofibres with scanning force microscopy Nanotechnology. 14: 134-137. DOI: 10.1088/0957-4484/14/2/306  0.324
2003 Cui J, Burghard M, Kern K. Reversible Sidewall Osmylation of Individual Carbon Nanotubes Nano Letters. 3: 613-615. DOI: 10.1021/Nl034135P  0.398
2003 Balasubramanian K, Friedrich M, Jiang C, Fan Y, Mews A, Burghard M, Kern K. Electrical transport and confocal Raman studies of electrochemically modified individual carbon nanotubes Advanced Materials. 15: 1515-1518. DOI: 10.1002/Adma.200305129  0.395
2002 Kooi SE, Schlecht U, Burghard M, Kern K. Electrochemical modification of single carbon nanotubes. Angewandte Chemie (International Ed. in English). 41: 1353-5. PMID 19750761 DOI: 10.1002/1521-3773(20020415)41:8<1353::Aid-Anie1353>3.0.Co;2-I  0.389
2002 Jiang C, Kempa K, Zhao J, Schlecht U, Kolb U, Basché T, Burghard M, Mews A. Strong enhancement of the Breit-Wigner-Fano Raman line in carbon nanotube bundles caused by plasmon band formation Physical Review B - Condensed Matter and Materials Physics. 66: 1614041-1614044. DOI: 10.1103/Physrevb.66.161404  0.356
2002 Krstić V, Roth S, Burghard M, Kern K, Rikken GLJA. Magneto-chiral anisotropy in charge transport through single-walled carbon nanotubes Journal of Chemical Physics. 117: 11315-11319. DOI: 10.1063/1.1523895  0.389
2002 Cui JB, Sordan R, Burghard M, Kern K. Carbon nanotube memory devices of high charge storage stability Applied Physics Letters. 81: 3260-3262. DOI: 10.1063/1.1516633  0.374
2002 Burghard M, Kooi S, Schlecht U, Balasubramanian K, Kern K. Electrochemical Functionalization of Individual Single-Wall Carbon Nanotubes Structural and Electronic Properties of Molecular Nanostructures. Xvi International Winterschool On Electronic Properties of Novel Materials. 633: 77-81. DOI: 10.1063/1.1514078  0.403
2002 Zhao J, Jiang C, Fan Y, Burghard M, Basché T, Mews A. Diameter-Dependent Combination Modes in Individual Single-Walled Carbon Nanotubes Nano Letters. 2: 823-826. DOI: 10.1021/Nl025576W  0.349
2002 Cui JB, Burghard M, Kern K. Room Temperature Single Electron Transistor by Local Chemical Modification of Carbon Nanotubes Nano Letters. 2: 117-120. DOI: 10.1021/Nl015659X  0.427
2002 McIntosh GC, Kim GT, Park JG, Krstic V, Burghard M, Jhang SH, Lee SW, Roth S, Park YW. Orientation dependence of magneto-resistance behaviour in a carbon nanotube rope Thin Solid Films. 417: 67-71. DOI: 10.1016/S0040-6090(02)00592-8  0.362
2002 Knez M, Sumser M, Bittner AM, Wege C, Jeske H, Kooi S, Burghard M, Kern K. Electrochemical modification of individual nano-objects Journal of Electroanalytical Chemistry. 522: 70-74. DOI: 10.1016/S0022-0728(01)00728-8  0.351
2002 Fan Y, Burghard M, Kern K. Chemical Defect Decoration of Carbon Nanotubes Advanced Materials. 14: 130-133. DOI: 10.1002/1521-4095(20020116)14:2<130::Aid-Adma130>3.0.Co;2-Z  0.363
2001 Mews A, Jiang C, Schuessler T, Philipp G, Fan Y, Burghard M. Raman investigation of single oxidized carbon nanotubes Israel Journal of Chemistry. 41: 15-22. DOI: 10.1560/08Mn-Kbvf-Bq0X-K41D  0.329
2001 Kim GT, Muster J, Burghard M, Roth S. Soft Reverse Current-Voltage Characteristics in V2O5 Nanofiber Junctions Mrs Proceedings. 703: 505-510. DOI: 10.1557/Proc-703-V13.4  0.327
2001 Kasumov AY, Deblock R, Kociak M, Reulet B, Bouchiat H, Guéron S, Khodos II, Gorbatov YB, Volkov VT, Journet C, Bernier P, Burghard M. Superconductivity in molecular wires Physics-Uspekhi. 44: 69-71. DOI: 10.1070/1063-7869/44/10S/S14  0.376
2001 Gu G, Burghard M, Kim G, Düsberg GS, Chiu PW, Krstic V, Roth S, Han WQ. Growth and electrical transport of germanium nanowires Journal of Applied Physics. 90: 5747-5751. DOI: 10.1063/1.1413495  0.337
2001 Šordan R, Burghard M, Kern K. Removable template route to metallic nanowires and nanogaps Applied Physics Letters. 79: 2073-2075. DOI: 10.1063/1.1405813  0.328
2001 Roth S, Burghard M, Krstic V, Liu K, Muster J, Philipp G, Kim GT, Park JG, Park YW. Quantum transport in molecular nanowires transistors Current Applied Physics. 1: 56-60. DOI: 10.1016/S1567-1739(00)00011-0  0.414
2001 Ferrer-Anglada N, Gorri JA, Muster J, Liu K, Burghard M, Roth S. Electrical transport and AFM microscopy on V2O5−X–polyaniline nanorods Materials Science and Engineering: C. 15: 237-239. DOI: 10.1016/S0928-4931(01)00270-3  0.322
2001 Park JG, Kim G, Krstic V, Lee SH, Kim B, Roth S, Burghard M, Park YW. Gating effect in the I-V characteristics of iodine doped polyacetylene nanofibers Synthetic Metals. 119: 469-470. DOI: 10.1016/S0379-6779(00)00744-X  0.353
2001 Park JG, Kim G, Krstic V, Kim B, Lee SH, Roth S, Burghard M, Park YW. Nanotransport in polyacetylene single fiber: Toward the intrinsic properties Synthetic Metals. 119: 53-56. DOI: 10.1016/S0379-6779(00)00689-5  0.36
2001 Park JG, Kim GT, Park JH, Yu HY, McIntosh G, Krstic V, Jhang SH, Kim B, Lee SH, Lee SW, Burghard M, Roth S, Park YW. Quantum transport in low-dimensional organic nanostructures Thin Solid Films. 393: 161-167. DOI: 10.1016/S0040-6090(01)01064-1  0.419
2001 Gu G, Philipp G, Wu X, Burghard M, Bittner AM, Roth S. Growth of Single‐Walled Carbon Nanotubes from Microcontact‐Printed Catalyst Patterns on Thin Si3N4 Membranes Advanced Functional Materials. 11: 295-298. DOI: 10.1002/1616-3028(200108)11:4<295::Aid-Adfm295>3.0.Co;2-2  0.3
2000 Itoh E, Iwamoto M, Burghard M, Roth S. Ultraviolet Photoelectron Spectroscopy and Surface Potential of π-conjugated Langmuir-Blodgett Films on Gold Metal Electrode Japanese Journal of Applied Physics. 39: 5146-5150. DOI: 10.1143/Jjap.39.5146  0.351
2000 Duesberg GS, Loa I, Burghard M, Syassen K, Roth S. Polarized Raman Spectroscopy on Isolated Single-Wall Carbon Nanotubes Physical Review Letters. 85: 5436-5439. DOI: 10.1103/Physrevlett.85.5436  0.382
2000 Krstic V, Roth S, Burghard M. Phase breaking in three-terminal contacted single-walled carbon nanotube bundles Physical Review B. 62. DOI: 10.1103/Physrevb.62.R16353  0.452
2000 Kim G, Muster J, Krstic V, Park JG, Park YW, Roth S, Burghard M. Field-effect transistor made of individual V2O5 nanofibers Applied Physics Letters. 76: 1875-1877. DOI: 10.1063/1.126197  0.316
2000 Krstic V, Muster J, Duesberg G, Philipp G, Burghard M, Roth S. Electrical transport in single-walled carbon nanotube bundles embedded in Langmuir–Blodgett monolayers Synthetic Metals. 110: 245-249. DOI: 10.1016/S0379-6779(99)00302-1  0.447
2000 Choi K, Bourgoin J, Auvray S, Esteve D, Duesberg G, Roth S, Burghard M. Controlled deposition of carbon nanotubes on a patterned substrate Surface Science. 462: 195-202. DOI: 10.1016/S0039-6028(00)00609-9  0.386
2000 Holzinger M, Hirsch A, Bernier P, Duesberg G, Burghard M. A new purification method for single-wall carbon nanotubes (SWNTs) Applied Physics a: Materials Science & Processing. 70: 599-602. DOI: 10.1007/S003390051087  0.319
2000 Mews A, Koberling F, Basché T, Philipp G, Duesberg GS, Roth S, Burghard M. Raman imaging of single carbon nanotubes Advanced Materials. 12: 1210-1214. DOI: 10.1002/1521-4095(200008)12:16<1210::Aid-Adma1210>3.0.Co;2-M  0.372
1999 Kasumov AY, Deblock R, Kociak M, Reulet B, Bouchiat H, Khodos II, Gorbatov YB, Volkov VT, Journet C, Burghard M. Supercurrents through single-walled carbon nanotubes Science. 284: 1508-1511. PMID 10348734 DOI: 10.1126/Science.284.5419.1508  0.428
1999 Burghard M, Mueller-Schwanneke C, Philipp G, Roth S. Coulomb blockade phenomena in ultrathin Langmuir-Blodgett sandwich junctions Journal of Physics: Condensed Matter. 11: 2993-3002. DOI: 10.1088/0953-8984/11/14/015  0.374
1999 Philipp G, Müller-Schwanneke C, Burghard M, Roth S, Klitzing Kv. Gold cluster formation at the interface of a gold/Langmuir-Blodgett film/gold microsandwich resulting in Coulomb charging phenomena Journal of Applied Physics. 85: 3374-3376. DOI: 10.1063/1.369691  0.353
1999 Liu K, Burghard M, Roth S, Bernier P. Conductance spikes in single-walled carbon nanotube field-effect transistor Applied Physics Letters. 75: 2494-2496. DOI: 10.1063/1.125059  0.428
1999 Kasumov A, Deblock R, Kociak M, Reulet B, Bouchiat H, Khodos I, Gorbatov Y, Volkov V, Journet C, Stephan O, Burghard M. Proximity-induced superconductivity in carbon nanotubes Comptes Rendus De L Academie Des Sciences Serie Ii Fascicule B-Mecanique Physique Astronomie. 327: 933-943. DOI: 10.1016/S1287-4620(99)80157-4  0.442
1999 Burghard M, Krstic V, Duesberg G, Philipp G, Muster J, Roth S, Journet C, Bernier P. Carbon SWNTs as wires and structural templates between nanoelectrodes Synthetic Metals. 103: 2540-2542. DOI: 10.1016/S0379-6779(99)80005-8  0.409
1999 Duesberg G, Blau W, Byrne H, Muster J, Burghard M, Roth S. Chromatography of carbon nanotubes Synthetic Metals. 103: 2484-2485. DOI: 10.1016/S0379-6779(98)01068-6  0.376
1999 Philipp G, Weimann T, Hinze P, Burghard M, Weis J. Shadow evaporation method for fabrication of sub 10 nm gaps between metal electrodes Microelectronic Engineering. 46: 157-160. DOI: 10.1016/S0167-9317(99)00052-0  0.348
1999 Duesberg G, Blau W, Byrne H, Muster J, Burghard M, Roth S. Experimental observation of individual single-wall nanotube species by Raman microscopy Chemical Physics Letters. 310: 8-14. DOI: 10.1016/S0009-2614(99)00594-1  0.35
1999 Thomsen C, Reich S, Jantoljak H, Loa I, Syassen K, Burghard M, Duesberg G, Roth S. Raman spectroscopy on single- and multi-walled nanotubes under high pressure Applied Physics a: Materials Science & Processing. 69: 309-312. DOI: 10.1007/S003390051006  0.352
1999 Duesberg G, Muster J, Byrne H, Roth S, Burghard M. Towards processing of carbon nanotubes for technical applications Applied Physics a: Materials Science & Processing. 69: 269-274. DOI: 10.1007/S003390051001  0.371
1999 Muster J, Duesberg G, Roth S, Burghard M. Application of scanning force microscopy in nanotube science Applied Physics a: Materials Science & Processing. 69: 261-267. DOI: 10.1007/S003390051000  0.371
1998 Itoh E, Kokubo H, Iwamoto M, Burghard M, Roth S, Hanack M. Electrostatic Phenomena in π-conjugated Langmuir-Blodgett Films on Metal Electrodes Japanese Journal of Applied Physics. 37: 577-583. DOI: 10.1143/Jjap.37.577  0.358
1998 Duesberg GS, Burghard M, Muster J, Philipp G. Separation of carbon nanotubes by size exclusion chromatography Chemical Communications. 435-436. DOI: 10.1039/A707465D  0.334
1998 Krstic V, Duesberg GS, Muster J, Burghard M, Roth S. Langmuir−Blodgett Films of Matrix-Diluted Single-Walled Carbon Nanotubes Chemistry of Materials. 10: 2338-2340. DOI: 10.1021/Cm980207F  0.402
1998 Roth S, Burghard M, Leising G. Molecular materials for electronic and optical applications Current Opinion in Solid State & Materials Science. 3: 209-215. DOI: 10.1016/S1359-0286(98)80091-0  0.341
1998 Burghard M, Philipp G, Mueller-Schwanneke C, Roth S. Formation of gold particles at a functional LB film/gold interface leading to Coulomb blockade phenomena Synthetic Metals. 94: 141-144. DOI: 10.1016/S0379-6779(97)04162-3  0.358
1998 Roth S, Blumentritt S, Burghard M, Cammi E, Carroll D, Curran S, Düsberg G, Liu K, Muster J, Philipp G, Rabenau T. Molecular rectifiers and transistors based on π-conjugated materials Synthetic Metals. 94: 105-110. DOI: 10.1016/S0379-6779(97)04153-2  0.336
1998 Roth S, Blumentritt S, Burghard M, Jaschinski O, Liu K, Muster J, Philipp G, Zha F, Redlich P, Carrol D, Ajayan P, Curran S, Düsberg G. Density of states and tunneling spectroscopy on molecular nanostructures Thin Solid Films. 331: 45-50. DOI: 10.1016/S0040-6090(98)00944-4  0.399
1998 Blumentritt S, Burghard M, Roth S, Nejo H. Self-assembly and scanning tunneling microscopy investigation of cyanine fibers on conducting substrates Surface Science. 397. DOI: 10.1016/S0039-6028(97)00872-8  0.357
1998 Duesberg G, Muster J, Krstic V, Burghard M, Roth S. Chromatographic size separation of single-wall carbon nanotubes Applied Physics a: Materials Science & Processing. 67: 117-119. DOI: 10.1007/S003390050747  0.397
1998 Burghard M, Duesberg G, Philipp G, Muster J, Roth S. Controlled Adsorption of Carbon Nanotubes on Chemically Modified Electrode Arrays Advanced Materials. 10: 584-588. DOI: 10.1002/(Sici)1521-4095(199805)10:8<584::Aid-Adma584>3.0.Co;2-9  0.354
1997 Roth S, Blumentritt S, Burghard M, Fischer CM, Philipp G, Mueller-Schwanneke C. Charge transport in LB microsandwiches Synthetic Metals. 86: 2415-2418. DOI: 10.1016/S0379-6779(97)81182-4  0.319
1996 Burghard M, Fischer CM, Roth S, Schlick U, Hanack M. Charge transport in ultrathin Langmuir-Blodgett film devices: HOMO-mediated tunneling? Synthetic Metals. 76: 241-244. DOI: 10.1016/0379-6779(95)03462-S  0.335
1996 Fischer CM, Burghard M, Roth S. Dark conductivity and photoconductivity of asymmetric gold/(Langmuir-Blodgett film)/gold tunnel junctions Synthetic Metals. 76: 237-240. DOI: 10.1016/0379-6779(95)03461-R  0.351
1996 Fischer CM, Burghard M, Roth S, Von Klitzing K. Novel tunneling experiments on organic heterostructures Surface Science. 361: 905-908. DOI: 10.1016/0039-6028(96)00561-4  0.375
1995 Fischer CM, Burghard M, Roth S, Klitzing Kv. Microstructured Gold/Langmuir-Blodgett Film/Gold Tunneling Junctions Applied Physics Letters. 66: 3331-3333. DOI: 10.1063/1.113747  0.351
1995 Fischer CM, Burghard M, Roth S. Molecular rectification in organic quantum wells Synthetic Metals. 71: 1975-1976. DOI: 10.1016/0379-6779(94)03131-O  0.322
1994 Schmelzer M, Burghard M, Roth S, Bäuerle P. New LB heterostructures containing electron donating and accepting molecules Molecular Crystals and Liquid Crystals. 253: 465-473. DOI: 10.1080/10587259408055256  0.32
1994 Schmelzer M, Burghard M, Fischer CM, Bäuerle P, Schier H, Roth S, Göpel W. Organized metal/organic film/metal heterostructures: a way towards molecular electronic devices? Synthetic Metals. 67: 281-286. DOI: 10.1016/0379-6779(94)90057-4  0.3
1994 Schmelzer M, Burghard M, Bäuerle P, Roth S. Structural information on thiophene Langmuir-Blodgett heterostructures Thin Solid Films. 243: 620-624. DOI: 10.1016/0040-6090(93)04171-N  0.312
1993 Schmelzer M, Burghard M, Bäuerle P, Roth S. Detailed structural investigations of highly aligned LB structures of thiophene derivatives Synthetic Metals. 61: 97-100. DOI: 10.1016/0379-6779(93)91204-F  0.312
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