David M. Fried, Ph.D.
Affiliations: | 2004 | Cornell University, Ithaca, NY, United States |
Area:
Electronics and Electrical EngineeringGoogle:
"David Fried"Parents
Sign in to add mentor| Kevin Kornegay | grad student | 2004 | Cornell | |
| (The design, fabrication and characterization of independent -gate FinFETs.) | ||||
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Publications
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| Akbulut MB, Gu J, Pap A, et al. (2017) Investigation of 3D photoresist profile effect in self-aligned patterning through virtual fabrication Proceedings of Spie. 10147 |
| Yang M, Chan VWC, Chan KK, et al. (2006) Hybrid-orientation technology (HOT): Opportunities and challenges Ieee Transactions On Electron Devices. 53: 965-978 |
| Steen S, McNab SJ, Sekaric L, et al. (2006) Hybrid lithography: The marriage between optical and e-beam lithography. A method to study process integration and device performance for advanced device nodes Microelectronic Engineering. 83: 754-761 |
| Ouyang Q, Yang M, Holt J, et al. (2005) Investigation of CMOS devices with embedded SiGe source/drain on hybrid orientation substrates Digest of Technical Papers - Symposium On Vlsi Technology. 2005: 28-29 |
| Sheraw CD, Yang M, Fried DM, et al. (2005) Dual stress liner enhancement in hybrid orientation technology Digest of Technical Papers - Symposium On Vlsi Technology. 2005: 12-13 |
| Fried DM, Duster JS, Kornegay KT. (2004) High-performance P-type independent-gate FinFETs Ieee Electron Device Letters. 25: 199-201 |
| Kedzierski J, Ieong M, Nowak E, et al. (2003) Extension and source/drain design for high-performance FinFET devices Ieee Transactions On Electron Devices. 50: 952-958 |
| Fried DM, Duster JS, Kornegay KT. (2003) Improved independent gate N-type FinFET fabrication and characterization Ieee Electron Device Letters. 24: 592-594 |
| Fried DM, Nowak EJ, Kedzierski J, et al. (2003) A Fin-type independent-double-gate NFET Device Research Conference - Conference Digest, Drc. 2003: 45-46 |
| Nowak EJ, Ludwig T, Aller I, et al. (2003) Scaling beyond the 65 nm node with FinFET-DGCMOS Proceedings of the Custom Integrated Circuits Conference. 339-342 |