Aaron R. Arehart, Ph.D.
Affiliations: | 2009 | Ohio State University, Columbus, Columbus, OH |
Area:
Electronics and Electrical Engineering, Computer ScienceGoogle:
"Aaron Arehart"Parents
Sign in to add mentor| Steven A. Ringel | grad student | 2009 | Ohio State | |
| (Investigation of electrically active defects in gallium nitride, aluminum gallium nitride , and aluminum gallium nitride/gallium nitride high electron mobility transistors.) | ||||
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Publications
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| Sun W, Jimenez JL, Arehart AR. (2020) Impact of Traps on the Adjacent Channel Power Ratios of GaN HEMTs Ieee Electron Device Letters. 41: 816-819 |
| Zhang Y, Chen Z, Li W, et al. (2020) Probing unintentional Fe impurity incorporation in MOCVD homoepitaxy GaN: Toward GaN vertical power devices Journal of Applied Physics. 127: 215707 |
| Kalarickal NK, Xia Z, McGlone JF, et al. (2020) High electron density β-(Al0.17Ga0.83)2O3/Ga2O3 modulation doping using an ultra-thin (1 nm) spacer layer Journal of Applied Physics. 127: 215706 |
| Ghadi H, McGlone JF, Jackson CM, et al. (2020) Full bandgap defect state characterization of β-Ga2O3 grown by metal organic chemical vapor deposition Apl Materials. 8: 021111 |
| Ferguson AJ, Farshchi R, Paul PK, et al. (2020) Defect-mediated metastability and carrier lifetimes in polycrystalline (Ag,Cu)(In,Ga)Se2 absorber materials Journal of Applied Physics. 127: 215702 |
| Feng Z, Bhuiyan AFMAU, Xia Z, et al. (2020) Probing Charge Transport and Background Doping in Metal‐Organic Chemical Vapor Deposition‐Grown (010) β‐Ga 2 O 3 Physica Status Solidi-Rapid Research Letters. 14: 2000145 |
| Zhang Y, Xia Z, Mcglone J, et al. (2019) Evaluation of Low-Temperature Saturation Velocity in |
| Sun W, Joh J, Krishnan S, et al. (2019) Investigation of Trap-Induced Threshold Voltage Instability in GaN-on-Si MISHEMTs Ieee Transactions On Electron Devices. 66: 890-895 |
| Joishi C, Zhang Y, Xia Z, et al. (2019) Breakdown Characteristics of $\beta$ -(Al 0.22 Ga 0.78 ) 2 O 3 /Ga 2 O 3 Field-Plated Modulation-Doped Field-Effect Transistors Ieee Electron Device Letters. 40: 1241-1244 |
| Xia Z, Xue H, Joishi C, et al. (2019) $\beta$ -Ga2O3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz Ieee Electron Device Letters. 40: 1052-1055 |