Pinaki Mazumder
Affiliations: | University of Michigan, Ann Arbor, Ann Arbor, MI |
Area:
Computer Science, Electronics and Electrical EngineeringGoogle:
"Pinaki Mazumder"Children
Sign in to add traineeAlejandro F. Gonzalez | grad student | 2002 | University of Michigan |
Qinwei Xu | grad student | 2006 | University of Michigan |
Baohua Wang | grad student | 2008 | University of Michigan |
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Publications
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Zeng H, Lan F, Zhang Y, et al. (2020) Broadband terahertz reconfigurable metasurface based on 1-bit asymmetric coding metamaterial Optics Communications. 458: 124770 |
Zhang Y, Zhao Y, Liang S, et al. (2018) Large phase modulation of THz wave via an enhanced resonant active HEMT metasurface Nanophotonics. 8: 153-170 |
Zheng N, Mazumder P. (2018) Learning in Memristor Crossbar-Based Spiking Neural Networks Through Modulation of Weight-Dependent Spike-Timing-Dependent Plasticity Ieee Transactions On Nanotechnology. 17: 520-532 |
Sun L, Zheng N, Zhang T, et al. (2018) Fault Modeling and Parallel Testing for 1T1M Memory Array Ieee Transactions On Nanotechnology. 17: 437-451 |
Zheng N, Mazumder P. (2018) A Scalable Low-Power Reconfigurable Accelerator for Action-Dependent Heuristic Dynamic Programming Ieee Transactions On Circuits and Systems I: Regular Papers. 65: 1897-1908 |
Shi M, Lan F, Mazumder P, et al. (2018) Enhanced quadruple-resonant terahertz metamaterial with asymmetric hybrid resonators Optical Materials. 75: 533-537 |
Aghadjani M, Erementchouk M, Mazumder P. (2018) Spatial accumulation of phase difference in spoof plasmon based Mach–Zehnder Interferometer Optics Communications. 410: 248-253 |
Yilmaz Y, Mazumder P. (2017) A Drift-Tolerant Read/Write Scheme for Multilevel Memristor Memory Ieee Transactions On Nanotechnology. 16: 1016-1027 |
Zheng N, Mazumder P. (2017) An Efficient Eligible Error Locator Polynomial Searching Algorithm and Hardware Architecture for One-Pass Chase Decoding of BCH Codes Ieee Transactions On Circuits and Systems Ii: Express Briefs. 64: 580-584 |
Zheng N, Mazumder P. (2017) Modeling and Mitigation of Static Noise Margin Variation in Subthreshold SRAM Cells Ieee Transactions On Circuits and Systems I: Regular Papers. 64: 2726-2736 |