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Tso-Ping Ma

Affiliations:

Electrical Engineering

Yale University, New Haven, CT

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Parents

Children

Ashot Melik-Martirosian	grad student	2002	Yale
Zhijiong Luo	grad student	2003	Yale
Yanxiang Liu	grad student	2007	Yale
Dong S. Eun	grad student	2011	Yale
Zuoguang Liu	grad student	2012	Yale

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Publications

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Bhuiyan MA, Zhou H, Chang S, et al. (2018) Total-Ionizing-Dose Responses of GaN-Based HEMTs With Different Channel Thicknesses and MOSHEMTs With Epitaxial MgCaO as Gate Dielectric Ieee Transactions On Nuclear Science. 65: 46-52
Bhuiyan MA, Zhou H, Jiang R, et al. (2018) Charge Trapping in Al2O3/$\beta$ -Ga2O3-Based MOS Capacitors Ieee Electron Device Letters. 39: 1022-1025
Gong N, Ma T. (2018) A Study of Endurance Issues in HfO 2 -Based Ferroelectric Field Effect Transistors: Charge Trapping and Trap Generation Ieee Electron Device Letters. 39: 15-18
Chang SJ, Kang HS, Lee JH, et al. (2016) Investigation of channel mobility in AlGaN/GaN high-electron-mobility transistors Japanese Journal of Applied Physics. 55
Gong N, Ma T. (2016) Why Is FE–HfO 2 More Suitable Than PZT or SBT for Scaled Nonvolatile 1-T Memory Cell? A Retention Perspective Ieee Electron Device Letters. 37: 1123-1126
Ni K, Zhang EX, Samsel IK, et al. (2015) Charge Collection Mechanisms in GaAs MOSFETs Ieee Transactions On Nuclear Science. 62: 2752-2759
Samsel IK, Zhang EX, Hooten NC, et al. (2013) Charge collection mechanisms in AlGaN/GaN MOS high electron mobility transistors Ieee Transactions On Nuclear Science. 60: 4439-4445
Reiner JW, Cui S, Liu Z, et al. (2010) Inelastic electron tunneling spectroscopy study of thin gate dielectrics. Advanced Materials (Deerfield Beach, Fla.). 22: 2962-8
Zhu WJ, Ma T, Tamagawa T, et al. (2002) Current transport in metal/hafnium oxide/silicon structure Ieee Electron Device Letters. 23: 97-99
She M, King T, Hu C, et al. (2002) JVD silicon nitride as tunnel dielectric in p-channel flash memory Ieee Electron Device Letters. 23: 91-93

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