James D. Plummer
Affiliations: | 1978- | Electrical Engineering | Stanford University, Palo Alto, CA |
Website:
https://engineering.stanford.edu/people/jim-plummerGoogle:
"James D. Plummer"Bio:
https://profiles.stanford.edu/jim-plummer
https://books.google.com/books?id=MaNdOO_e8REC
Parents
Sign in to add mentorJames D. Meindl | grad student | 1971 | Stanford (Physics Tree) | |
(MOS Electronics for a Reading Aid for the Blind) |
Children
Sign in to add traineeSergio Bampi | grad student | Stanford (Computer Science Tree) | |
John C. Bravman | grad student | 1984 | Stanford (Physics Tree) |
Jason C. S. Woo | grad student | 1987 | Stanford |
Gregory T. A. Kovacs | grad student | 1990 | Stanford |
Joseph W. Tringe | grad student | 2000 | Stanford |
Celisa K. Date | grad student | 2001 | Stanford |
Mahmood R. Kasnavi | grad student | 2001 | Stanford |
Deok-kee Kim | grad student | 2001 | Stanford |
Kyung-man Lee | grad student | 2001 | Stanford |
Farid Nemati | grad student | 2001 | Stanford |
Ant Ural | grad student | 2001 | Stanford |
Paul H. Hargrove | grad student | 2003 | Stanford |
Frankie Y. Liu | grad student | 2003 | Stanford |
Ali Mokhberi | grad student | 2003 | Stanford |
Julie L. Ngau | grad student | 2003 | Stanford |
Kailash Gopalakrishnan | grad student | 2004 | Stanford |
Sameer H. Jain | grad student | 2005 | Stanford |
Yaocheng Liu | grad student | 2005 | Stanford |
Eun-Ha Kim | grad student | 2006 | Stanford |
Yue Liang | grad student | 2006 | Stanford |
Ali Agah | grad student | 2007 | Stanford |
Raymond Woo | grad student | 2009 | Stanford |
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Publications
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Zulauf G, Tong Z, Plummer JD, et al. (2019) Active Power Device Selection in High- and Very-High-Frequency Power Converters Ieee Transactions On Power Electronics. 34: 6818-6833 |
Tong Z, Zulauf G, Xu J, et al. (2019) Output Capacitance Loss Characterization of Silicon Carbide Schottky Diodes Ieee Journal of Emerging and Selected Topics in Power Electronics. 7: 865-878 |
Bai X, Chen C, Mukherjee N, et al. (2016) Rapid Melt Growth of Single Crystal InGaAs on Si Substrates Advances in Materials Science and Engineering. 2016: 1-5 |
Bai X, Chen CY, Griffin PB, et al. (2014) Si incorporation from the seed into Ge stripes crystallized using rapid melt growth Applied Physics Letters. 104 |
Zhang Z, Chen CY, Crnogorac F, et al. (2013) Low-temperature monolithic three-layer 3-D process for FPGA Ieee Electron Device Letters. 34: 1044-1046 |
Koh HYS, Chen SL, Griffin PB, et al. (2010) High quality single-crystal laterally graded SiGe on insulator by rapid melt growth Electrochemical and Solid-State Letters. 13 |
Chen SL, Griffin PB, Plummer JD. (2010) Single-crystal gaas and gasb on insulator on bulk Si substrates based on rapid melt growth Ieee Electron Device Letters. 31: 597-599 |
Agah A, Vleugels K, Griffin PB, et al. (2010) A high-resolution low-power incrementalΣADC with extended range for biosensor arrays Ieee Journal of Solid-State Circuits. 45: 1099-1110 |
Chen SL, Griffin PB, Plummer JD. (2009) Negative differential resistance circuit design and memory applications Ieee Transactions On Electron Devices. 56: 634-640 |
Onal C, Woo R, Koh HYS, et al. (2009) A novel depletion-IMOS (DIMOS) device with improved reliability and reduced operating voltage Ieee Electron Device Letters. 30: 64-67 |