Konstantinos Adam, Ph.D.
Affiliations: | 2001 | University of California, Berkeley, Berkeley, CA, United States |
Area:
Integrated Circuits (INC); Solid-State DevicesGoogle:
"Konstantinos Adam"Parents
Sign in to add mentorAndrew R. Neureuther | grad student | 2001 | UC Berkeley | |
(Domain decomposition methods for the electromagnetic simulation of scattering from three-dimensional structures with applications in lithography.) |
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Publications
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Lam MC, Clifford C, Oliver M, et al. (2016) Accurate, full-chip, three-dimensional electromagnetic field model for non-Manhattan mask corners Journal of Micro/ Nanolithography, Mems, and Moems. 15 |
Lam M, Clifford C, Oliver M, et al. (2015) Accurate, full chip 3D electromagnetic field model for non-Manhattan mask corners Proceedings of Spie - the International Society For Optical Engineering. 9426 |
Sturtevant J, Buck P, Schulze S, et al. (2014) 14-nm photomask simulation sensitivity Proceedings of Spie - the International Society For Optical Engineering. 9231 |
Fryer D, Lam M, Adam K, et al. (2014) Rapid, accurate improvement in 3D mask representation via input geometry optimization and crosstalk Proceedings of Spie - the International Society For Optical Engineering. 9052 |
Lam MC, Adam K, Fryer D, et al. (2013) Accurate 3DEMF mask model for full-chip simulation Proceedings of Spie - the International Society For Optical Engineering. 8683 |
Mailfert J, Zuniga C, Philipsen V, et al. (2012) 3D mask modeling for EUV lithography Proceedings of Spie - the International Society For Optical Engineering. 8322 |
Word J, Zuniga C, Lam M, et al. (2011) OPC modeling and correction solutions for EUV lithography Proceedings of Spie - the International Society For Optical Engineering. 8166 |
Adam K, Neureuther AR. (2002) Domain decomposition methods for the rapid electromagnetic simulation of photomask scattering Journal of Microlithography, Microfabrication and Microsystems. 1: 253-269 |
Adam K, Neureuther AR, Socha R, et al. (1998) Analysis of sub-wavelength sized OPC features Microelectronic Engineering. 41: 137-140 |