Larry Larson, Ph.D.
Affiliations: | Electrical Engineering | Brown University, Providence, RI |
Area:
Wireless communications, Semiconductor devices, high-frequency circuits, communications systemsGoogle:
"Larry Larson"
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Publications
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| Subbanna S, Freeman G, Rieh J, et al. (2002) 50-200 GHz silicon-germanium heterojunction bipolar transistor BICMOS technology and a computer-aided design environment for 2-50+ GHz very large-scale integration mixed-signal ICs Japanese Journal of Applied Physics. 41: 1111-1123 |
| Larson L, Asbeck P, Hanington G, et al. (1999) Device and circuit approaches for improved wireless communications transmitters Ieee Personal Communications. 6: 18-23 |
| Jayaraman A, Chen P, Hanington G, et al. (1998) Linear high-efficiency microwave power amplifiers using bandpass delta-sigma modulators Ieee Microwave and Guided Wave Letters. 8: 121-123 |
| Lam F, Matloubian M, Igawa A, et al. (1994) 44-GHz high-efficiency InP-HEMT MMIC power amplifier Ieee Microwave and Guided Wave Letters. 4: 277-278 |
| Lam W, Matloubian M, Kurdoghlian A, et al. (1993) High-efficiency InP-based HEMT MMIC power amplifier for Q-band applications Ieee Microwave and Guided Wave Letters. 3: 420-422 |
| Matloubian M, Brown AS, Nguyen LD, et al. (1993) 20-GHz High-Efficiency AlInAs-GalnAs on InP Power HEMT Ieee Microwave and Guided Wave Letters. 3: 142-144 |