David Westerfeld, Ph.D.
Affiliations: | 2005 | Stony Brook University, Stony Brook, NY, United States |
Area:
Optoelectronic device and systems; Semiconductor devices, physics and technology.Google:
"David Westerfeld"Parents
Sign in to add mentor| Gregory Belenky | grad student | 2005 | SUNY Stony Brook | |
| (Gain and loss measurements in gallium antimonide-based mid-infrared lasers.) | ||||
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Publications
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| Suchalkin S, Lin Y, Shterengas L, et al. (2016) Bi-directional dual color mid-IR light emitting diodes Superlattices and Microstructures. 100: 142-147 |
| Laikhtman B, Suchalkin S, Westerfeld D, et al. (2015) Nonuniform radiative recombination in n - I - p LED Journal of Physics D: Applied Physics. 48 |
| Lin Y, Suchalkin S, Kipshidze G, et al. (2015) Effect of hole transport on performance of infrared type-II superlattice light emitting diodes Journal of Applied Physics. 117 |
| Lin Y, Donetsky D, Wang D, et al. (2015) Development of Bulk InAsSb Alloys and Barrier Heterostructures for Long-Wave Infrared Detectors Journal of Electronic Materials. 44: 3360-3366 |
| Jung S, Suchalkin S, Kipshidze G, et al. (2013) Light-emitting diodes operating at 2 \mu{\rm m} with 10 mw optical power Ieee Photonics Technology Letters. 25: 2278-2280 |
| Belenky G, Wang D, Lin Y, et al. (2013) Metamorphic InAsSb/AlInAsSb heterostructures for optoelectronic applications Applied Physics Letters. 102 |
| Shterengas L, Kipshidze G, Hosoda T, et al. (2012) Diode lasers operating in spectral range from 1.9 to 3.5 μm Conference Digest - Ieee International Semiconductor Laser Conference. 24-25 |
| Hosoda T, Chen J, Tsvid G, et al. (2011) Progress in development of room temperature CW GaSb based diode lasers for 2-3.5 μm spectral region International Journal of High Speed Electronics and Systems. 20: 43-49 |
| Liang R, Chen J, Kipshidze G, et al. (2011) High-power 2.2-μm diode lasers with heavily strained active region Ieee Photonics Technology Letters. 23: 603-605 |
| Jung S, Suchalkin S, Westerfeld D, et al. (2011) High dimensional addressable LED arrays based on type i GaInAsSb quantum wells with quinternary AlGaInAsSb barriers Semiconductor Science and Technology. 26 |