Stephen A. Lyon

Affiliations: 
Electrical Engineering Princeton University, Princeton, NJ 
Area:
Applied Physics,Photonics,Quantum Information
Website:
https://ece.princeton.edu/people/stephen-lyon
Google:
"Stephen Aplin Lyon" OR "Stephen A. Lyon"
Bio:

Lyon, Stephen Aplin (1979) Optical properties of excited silicon and germanium at low temperatures. Dissertation (Ph.D.), California Institute of Technology. doi:10.7907/8gcb-7j35.

Parents

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Thomas C. McGill grad student 1979 Caltech (Physics Tree)
 (Optical properties of excited silicon and germanium at low temperatures)
Darryl Lyle Smith grad student 1979 Caltech (Physics Tree)

Children

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Keith W. Goossen grad student 1988 Princeton
Eric Shaner grad student 2004 Princeton
Daniel Wasserman grad student 2004 Princeton
Shyam Shankar grad student 2002-2008 Princeton
Forrest R. Bradbury grad student 2010 Princeton
Jianhua He grad student 2012 Princeton
Maika Takita grad student 2015 Princeton
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Publications

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Kim J, Hazard TM, Houck AA, et al. (2019) A low-disorder metal-oxide-silicon double quantum dot Applied Physics Letters. 114: 043501
Asfaw AT, Kleinbaum EI, Henry MD, et al. (2019) Transport Measurements of Surface Electrons in 200-nm-Deep Helium-Filled Microchannels Above Amorphous Metallic Electrodes Journal of Low Temperature Physics. 195: 300-306
Rose BC, Huang D, Zhang ZH, et al. (2018) Observation of an environmentally insensitive solid-state spin defect in diamond. Science (New York, N.Y.). 361: 60-63
Rose BC, Thiering G, Tyryshkin AM, et al. (2018) Strongly anisotropic spin relaxation in the neutral silicon vacancy center in diamond Physical Review B. 98
Sigillito AJ, Tyryshkin AM, Schenkel T, et al. (2017) All-electric control of donor nuclear spin qubits in silicon. Nature Nanotechnology
Eichler C, Sigillito AJ, Lyon SA, et al. (2017) Electron Spin Resonance at the Level of 10^{4} Spins Using Low Impedance Superconducting Resonators. Physical Review Letters. 118: 037701
Kamburov D, Baldwin KW, West KW, et al. (2017) Use of micro-photoluminescence as a contactless measure of the 2D electron density in a GaAs quantum well Applied Physics Letters. 110: 262104
Kim J, Tyryshkin AM, Lyon SA. (2017) Annealing shallow Si/SiO2 interface traps in electron-beam irradiated high-mobility metal-oxide-silicon transistors Applied Physics Letters. 110: 123505
Rose B, Weis C, Tyryshkin A, et al. (2017) Spin coherence and 14 N ESEEM effects of nitrogen-vacancy centers in diamond with X-band pulsed ESR Diamond and Related Materials. 72: 32-40
Sigillito AJ, Tyryshkin AM, Beeman JW, et al. (2016) Large Stark tuning of donor electron spin qubits in germanium Physical Review B. 94
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