Eric J. Stewart, Ph.D.
Affiliations: | 2004 | Princeton University, Princeton, NJ |
Area:
Biological & Biomedical,Energy & Environment,Materials & Devices,NanotechnologiesGoogle:
"Eric Stewart"Parents
Sign in to add mentor| James Sturm | grad student | 2004 | Princeton | |
| (Boron segregation in silicon germanium carbide and silicon carbide alloys and application to p-channel MOSFETs.) | ||||
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Publications
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| Stewart EJ, Carroll MS, Sturm JC. (2005) Boron segregation in single-crystal Si1-x-yGexC y and Si1-yCy alloys Journal of the Electrochemical Society. 152: G500-G505 |
| Stewart EJ, Carroll MS, Sturm JC. (2004) Boron segregation and electrical properties in polycrystalline Si 1-x-yGe xC y and Si 1-yC y alloys Journal of Applied Physics. 95: 4029-4035 |
| Stewart EJ, Sturm JC. (2004) Segregation of boron to polycrystalline and single-crystal Si 1-x-yGexCy and Si1-yCy layers Applied Surface Science. 224: 87-90 |
| Stewart EJ, Sturm JC. (2003) Boron segregation and out-diffusion in single-crystal Si1-yCy Materials Research Society Symposium - Proceedings. 765: 223-228 |
| Stewart EJ, Carroll MS, Sturm JC. (2001) Boron segregation and electrical properties in polycrystalline SiGeC Materials Research Society Symposium - Proceedings. 669: J691-J696 |
| Stewart EJ, Carroll MS, Sturm JC. (2001) Suppression of boron penetration in P-channel MOSFETs using polycrystalline Si1-x-yGexCy gate layers Ieee Electron Device Letters. 22: 574-576 |