Tal Margalith, Ph.D.

Affiliations: 
2002 University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Electronics & Photonics
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"Tal Margalith"

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Larry A. Coldren grad student 2002 UC Santa Barbara
 (Development of growth and fabrication technology for gallium nitride-based vertical cavity surface emitting lasers.)
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Publications

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Chan L, Shapturenka P, Pynn CD, et al. (2020) Lift-off of semipolar blue and green III-nitride LEDs grown on free-standing GaN Applied Physics Letters. 117: 21104
Ley RT, Smith JM, Wong MS, et al. (2020) Revealing the importance of light extraction efficiency in InGaN/GaN microLEDs via chemical treatment and dielectric passivation Applied Physics Letters. 116: 251104
Reilly CE, Lheureux G, Cozzan C, et al. (2020) Transmission Geometry Laser Lighting with A Compact Emitter Physica Status Solidi (a)
Forman CA, Lee S, Young EC, et al. (2018) Continuous-wave operation of m-plane GaN-based vertical-cavity surface-emitting lasers with a tunnel junction intracavity contact Applied Physics Letters. 112: 111106
Pynn CD, Chan L, Lora Gonzalez F, et al. (2017) Enhanced light extraction from free-standing InGaN/GaN light emitters using bio-inspired backside surface structuring. Optics Express. 25: 15778-15785
Forman C, Leonard J, Yonkee B, et al. (2017) Semipolar (202̅1) III-Nitride P-Down LEDs with in situ anneal to reduce the Mg memory effect Journal of Crystal Growth. 464: 197-200
Leonard JT, Young EC, Yonkee BP, et al. (2016) Comparison of nonpolar III-nitride vertical-cavity surface-emitting lasers with tunnel junction and ITO intracavity contacts Proceedings of Spie. 9748
Lee C, Zhang C, Cantore M, et al. (2015) 4 Gbps direct modulation of 450 nm GaN laser for high-speed visible light communication. Optics Express. 23: 16232-7
Leonard JT, Young EC, Yonkee BP, et al. (2015) Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact Applied Physics Letters. 107
Leonard JT, Cohen DA, Yonkee BP, et al. (2015) Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture Applied Physics Letters. 107
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