Daniel F. Feezell, Ph.D.

Affiliations: 
2005 University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Electronics & Photonics
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"Daniel Feezell"

Parents

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Larry A. Coldren grad student 2005 UC Santa Barbara
 (Long-wavelength vertical -cavity surface -emitting lasers with selectively etched thin apertures.)
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Publications

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Behzadirad M, Rishinaramangalam AK, Feezell D, et al. (2020) Field emission scanning probe lithography with GaN nanowires on active cantilevers Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 38: 32806
Rashidi A, Rishinaramangalam AK, Aragon AA, et al. (2020) High-Speed Nonpolar InGaN/GaN Superluminescent Diode With 2.5 GHz Modulation Bandwidth Ieee Photonics Technology Letters. 32: 383-386
Aragon A, Monavarian M, Stricklin I, et al. (2020) Interfacial Impurities and Their Electronic Signatures in High‐Voltage Regrown Nonpolar m‐Plane GaN Vertical p–n Diodes Physica Status Solidi (a). 217: 1900757
Rashidi A, Monavarian M, Aragon A, et al. (2019) Thermal and efficiency droop in InGaN/GaN light-emitting diodes: decoupling multiphysics effects using temperature-dependent RF measurements. Scientific Reports. 9: 19921
Mishkat-Ul-Masabih SM, Luk TS, Monavarian M, et al. (2019) Polarization-pinned emission of a continuous-wave optically pumped nonpolar GaN-based VCSEL using nanoporous distributed Bragg reflectors. Optics Express. 27: 9495-9501
Ranga P, Rishinaramangalam A, Varley J, et al. (2019) Si-doped β-(Al0.26Ga0.74)2O3 thin films and heterostructures grown by metalorganic vapor-phase epitaxy Applied Physics Express. 12: 111004
Mishkat-Ul-Masabih SM, Aragon AA, Monavarian M, et al. (2019) Electrically injected nonpolar GaN-based VCSELs with lattice-matched nanoporous distributed Bragg reflector mirrors Applied Physics Express. 12: 36504
Monavarian M, Pickrell G, Aragon AA, et al. (2019) High-Voltage Regrown Nonpolar ${m}$ -Plane Vertical p-n Diodes: A Step Toward Future Selective-Area-Doped Power Switches Ieee Electron Device Letters. 40: 387-390
Nami M, Rashidi A, Monavarian M, et al. (2019) Electrically Injected GHz-Class GaN/InGaN Core–ShellNanowire-Based μLEDs: Carrier Dynamics and Nanoscale Homogeneity Acs Photonics. 6: 1618-1625
Okur S, Rishinaramangalam AK, Mishkat Ul Masabih S, et al. (2018) Spectrally-Resolved Internal Quantum Efficiency and Carrier Dynamics of Semipolar (101 ̅1) Core-Shell Triangular Nanostripe GaN/InGaN LEDs. Nanotechnology
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