Sten J. Heikman, Ph.D.
Affiliations: | 2002 | University of California, Santa Barbara, Santa Barbara, CA, United States |
Area:
Electronics & PhotonicsGoogle:
"Sten Heikman"Parents
Sign in to add mentor| Steven P Denbaars | grad student | 2002 | UC Santa Barbara | |
| (MOCVD growth technologies for applications in aluminum gallium nitride/gallium nitride high electron mobility transistors.) | ||||
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Publications
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| Wu Y, Jacob-Mitos M, Moore ML, et al. (2008) A 97.8% efficient GaN HEMT boost converter with 300-W output power at 1 MHz Ieee Electron Device Letters. 29: 824-826 |
| Palacios T, Chini A, Buttari D, et al. (2006) Use of double-channel heterostructures to improve the access resistance and linearity in GaN-based HEMTs Ieee Transactions On Electron Devices. 53: 562-565 |
| Xu H, Gao S, Heikman S, et al. (2006) A high-efficiency class-E GaN HEMT power amplifier at 1.9 GHz Ieee Microwave and Wireless Components Letters. 16: 22-24 |
| Gao S, Xu H, Heikman S, et al. (2006) Two-stage quasi-class-E power amplifier in GaN HEMT technology Ieee Microwave and Wireless Components Letters. 16: 28-30 |
| Dora Y, Chakraborty A, Heikman S, et al. (2006) Effect of ohmic contacts on buffer leakage of GaN transistors Ieee Electron Device Letters. 27: 529-531 |
| Palacios T, Chakraborty A, Heikman S, et al. (2006) AlGaN/GaN high electron mobility transistors with InGaN back-barriers Ieee Electron Device Letters. 27: 13-15 |
| Palacios T, Shen L, Keller S, et al. (2006) Nitride-based high electron mobility transistors with a GaN spacer Applied Physics Letters. 89 |
| Heikman S, Keller S, Mishra UK. (2006) Vapor-phase epitaxy of gallium nitride by gallium arc discharge evaporation Journal of Crystal Growth. 293: 335-343 |
| Heikman S, Keller S, Newman S, et al. (2005) Epitaxial lateral overgrowth of high Al composition AlGaN alloys on deep grooved SiC substrates Japanese Journal of Applied Physics, Part 2: Letters. 44: L405-L407 |
| Hansen PJ, Vaithyanathan V, Wu Y, et al. (2005) Rutile films grown by molecular beam epitaxy on GaN and AlGaN/GaN Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23: 499-506 |