Brendan J. Moran, Ph.D.
Affiliations: | 2004 | University of California, Santa Barbara, Santa Barbara, CA, United States |
Area:
Electronics & PhotonicsGoogle:
"Brendan Moran"Parents
Sign in to add mentor| Steven P Denbaars | grad student | 2004 | UC Santa Barbara | |
| (Metalorganic chemical vapor deposition of gallium nitride on silicon carbide for high electron mobility transistors.) | ||||
BETA: Related publications
See more...
Publications
|
You can help our author matching system! If you notice any publications incorrectly attributed to this author, please sign in and mark matches as correct or incorrect. |
| David A, Moran B, McGroddy K, et al. (2008) GaNInGaN light emitting diodes with embedded photonic crystal obtained by lateral epitaxial overgrowth Applied Physics Letters. 92 |
| Arehart AR, Moran B, Speck JS, et al. (2006) Effect of threading dislocation density on Ni/n-GaN Schottky diode I-V characteristics Journal of Applied Physics. 100 |
| David A, Fujii T, Moran B, et al. (2006) Photonic crystal laser lift-off GaN light-emitting diodes Applied Physics Letters. 88: 133514 |
| Moe CG, Schmidt MC, Masui H, et al. (2006) Optimized doping and contact scheme for low-voltage 275-nm deep ultraviolet LEDs Journal of Electronic Materials. 35: 750-753 |
| Moe CG, Masui H, Schmidt MC, et al. (2005) Milliwatt power deep ultraviolet light emitting diodes grown on silicon carbide Japanese Journal of Applied Physics, Part 2: Letters. 44: L502-L504 |
| Heikman S, Keller S, Newman S, et al. (2005) Epitaxial lateral overgrowth of high Al composition AlGaN alloys on deep grooved SiC substrates Japanese Journal of Applied Physics, Part 2: Letters. 44: L405-L407 |
| McCarthy LS, Zhang NQ, Xing H, et al. (2004) High voltage AlGaN/GaN heterojunction transistors International Journal of High Speed Electronics and Systems. 14: 225-243 |
| Armstrong A, Arehart AR, Moran B, et al. (2004) Impact of carbon on trap states in n-type GaN grown by metalorganic chemical vapor deposition Applied Physics Letters. 84: 374-376 |
| Moran B, Wu F, Romanov AE, et al. (2004) Structural and morphological evolution of GaN grown by metalorganic chemical vapor deposition on SiC substrates using an AlN initial layer Journal of Crystal Growth. 273: 38-47 |
| Armstrong A, Arehart AR, Ringel SA, et al. (2003) Identification of Carbon-related Bandgap States in GaN Grown by MOCVD Mrs Proceedings. 798 |