Benjamin A. Haskell, Ph.D.
Affiliations: | 2005 | University of California, Santa Barbara, Santa Barbara, CA, United States |
Area:
Electronics & PhotonicsGoogle:
"Benjamin Haskell"Parents
Sign in to add mentor| Steven P Denbaars | grad student | 2005 | UC Santa Barbara | |
| (Structure of nonpolar gallium nitride films grown by hydride vapor phase epitaxy.) | ||||
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Publications
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| Imer B, Haskell B, Rajan S, et al. (2008) Electrical characterization of low defect density nonpolar (1120) a-plane GaN grown with sidewall lateral epitaxial overgrowth (SLEO) Journal of Materials Research. 23: 551-555 |
| Law JJM, Yu ET, Haskell BA, et al. (2008) Characterization of nanoscale electronic structure in nonpolar GaN using scanning capacitance microscopy Journal of Applied Physics. 103 |
| Barabash RI, Ice GE, Haskell BA, et al. (2008) White X-ray microdiffraction analysis of defects, strain and tilts in a free standing GaN film Physica Status Solidi (B) Basic Research. 245: 899-902 |
| Imer B, Schmidt M, Haskell B, et al. (2008) Improved quality nonpolar a-plane GaN/AlGaN UV LEDs grown with sidewall lateral epitaxial overgrowth (SLEO) Physica Status Solidi (a) Applications and Materials Science. 205: 1705-1712 |
| Haskell BA, Fini PT, Nakamura S. (2008) Growth of Planar and Reduced-defect Density Nonpolar GaN Films by Hydride Vapor Phase Epitaxy Nitrides With Nonpolar Surfaces: Growth, Properties, and Devices. 31-51 |
| Chakraborty A, Haskell BA, Wu F, et al. (2007) Structural and optical properties of nonpolar InGaN/GaN multiple quantum wells grown on planar and lateral epitaxially overgrown m-plane GaN films Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 46: 542-546 |
| Onuma T, Koyama T, Chakraborty A, et al. (2007) Radiative and nonradiative lifetimes in nonpolar m -plane Inx Ga1-x NGaN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 1524-1528 |
| Darakchieva V, Paskova T, Schubert M, et al. (2007) Anisotropic strain and phonon deformation potentials in GaN Physical Review B - Condensed Matter and Materials Physics. 75 |
| Chichibu SF, Uedono A, Onuma T, et al. (2007) Origin of localized excitons in In-containing three-dimensional bulk (Al,In,Ga)N alloy films probed by time-resolved photoluminescence and monoenergetic positron annihilation techniques Philosophical Magazine. 87: 2019-2039 |
| Kröger R, Paskova T, Rosenauer A, et al. (2007) On the mechanism of dislocation and stacking fault formation in a-plane GaN films grown by hydride vapor phase epitaxy Aip Conference Proceedings. 893: 341-342 |