Ingrid L. Koslow, Ph.D.
Affiliations: | 2013 | Materials | University of California, Santa Barbara, Santa Barbara, CA, United States |
Area:
Electronics & PhotonicsGoogle:
"Ingrid Koslow"Parents
Sign in to add mentor| Steven P Denbaars | grad student | 2013 | UC Santa Barbara | |
| (Strain Relaxation in Semipolar III-Nitrides for Light Emitting Diode Applications.) | ||||
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Publications
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| Freytag S, Winkler M, Goldhahn R, et al. (2020) Polarization fields in semipolar ( 20 2 ¯ 1 ¯ ) and ( 20 2 ¯ 1 ) InGaN light emitting diodes Applied Physics Letters. 116: 62106 |
| Susilo N, Schilling M, Narodovitch M, et al. (2019) Precise determination of polarization fields in c-plane GaN/Al x Ga1-x N/GaN heterostructures with capacitance–voltage-measurements Japanese Journal of Applied Physics. 58 |
| Mounir C, Koslow IL, Wernicke T, et al. (2018) On the optical polarization properties of semipolar ( 20 2 ¯ 1 ) and ( 20 2 ¯ 1 ¯ ) InGaN/GaN quantum wells Journal of Applied Physics. 123: 85705 |
| Mounir C, Schwarz UT, Koslow IL, et al. (2016) Impact of inhomogeneous broadening on optical polarization of high-inclination semipolar and nonpolar In x Ga 1 -x N /GaN quantum wells Physical Review B. 93: 235314 |
| Dinh DV, Corbett BM, Parbrook PJ, et al. (2016) Role of substrate quality on the performance of semipolar (112¯2) InGaN light-emitting diodes Journal of Applied Physics. 120: 135701 |
| Rychetsky M, Koslow I, Avinc B, et al. (2016) Determination of polarization fields in group III-nitride heterostructures by capacitance-voltage-measurements Journal of Applied Physics. 119: 95713 |
| Rychetsky M, Koslow IL, Wernicke T, et al. (2016) Impact of acceptor concentration on the resistivity of Ni/Au p-contacts on semipolar (20-21) GaN:Mg Physica Status Solidi (B) Basic Research. 253: 169-173 |
| Alamé S, Quezada AN, Skuridina D, et al. (2015) Preparation and structure of ultra-thin GaN (0001) layers on In0.11Ga0.89N-single quantum wells Materials Science in Semiconductor Processing |
| Koslow IL, McTaggart C, Wu F, et al. (2014) Improved performance of (2021) long-wavelength light-emitting diodes grown with wide quantum wells on stress-relaxed InxGa1-xN buffer layers Applied Physics Express. 7 |
| Koslow IL, Hardy MT, Shan Hsu P, et al. (2014) Onset of plastic relaxation in semipolar (11 2 ̄ 2) In xGa1-xN/GaN heterostructures Journal of Crystal Growth. 388: 48-53 |