Robert L. Coffie, Ph.D.
Affiliations: | 2003 | University of California, Santa Barbara, Santa Barbara, CA, United States |
Area:
Electronics & PhotonicsGoogle:
"Robert Coffie"Parents
Sign in to add mentor| Umesh Mishra | grad student | 2003 | UC Santa Barbara | |
| (Characterizing and suppressing DC-to-RF dispersion in aluminum gallium nitride/gallium nitride high electron mobility transistors.) | ||||
BETA: Related publications
See more...
Publications
|
You can help our author matching system! If you notice any publications incorrectly attributed to this author, please sign in and mark matches as correct or incorrect. |
| Coffie R. (2015) Calculating drain delay in high electron mobility transistors Solid-State Electronics. 114: 98-103 |
| Heying B, Smorchkova IP, Coffie R, et al. (2007) In situ SiN passivation of AlGaN/GaN HEMTs by molecular beam epitaxy Electronics Letters. 43: 779-780 |
| Chini A, Buttari D, Coffie R, et al. (2004) Power and linearity characteristics of field-plated recessed-gate AlGaN-GaN HEMTs Ieee Electron Device Letters. 25: 229-231 |
| Shen L, Coffie R, Buttari D, et al. (2004) High-Power Polarization-Engineered GaN/AlGaN/GaN HEMTs without Surface Passivation Ieee Electron Device Letters. 25: 7-9 |
| Chini A, Buttari D, Coffie R, et al. (2004) 12 W/mm power density AlGaN/GaN HEMTs on sapphire substrate Electronics Letters. 40: 73-74 |
| Shen L, Coffie R, Buttari D, et al. (2004) Unpassivated GaN/AlGaN/GaN power high electron mobility transistors with dispersion controlled by epitaxial layer design Journal of Electronic Materials. 33: 422-425 |
| Paidi V, Xie S, Coffie R, et al. (2003) High linearity and high efficiency of class-B power amplifiers in GaN HEMT technology Ieee Transactions On Microwave Theory and Techniques. 51: 643-652 |
| Xie S, Paidi V, Coffie R, et al. (2003) High-linearity class B power amplifiers in GaN HEMT technology Ieee Microwave and Wireless Components Letters. 13: 284-286 |
| Buttari D, Chini A, Palacios T, et al. (2003) Origin of etch delay time in Cl 2 dry etching of AlGaN/GaN structures Applied Physics Letters. 83: 4779-4781 |
| Coffie R, Shen L, Parish G, et al. (2003) Unpassivated p-GaN/AlGaN/GaN HEMTs with 7.1 W/mm at 10 GHz Electronics Letters. 39: 1419-1420 |