Felix Recht, Ph.D.
Affiliations: | 2009 | University of California, Santa Barbara, Santa Barbara, CA, United States |
Area:
Electronics & PhotonicsGoogle:
"Felix Recht"Parents
Sign in to add mentor| Umesh Mishra | grad student | 2009 | UC Santa Barbara | |
| (Development of a silicon ion implantation technology for the aluminum gallium nitride/gallium nitride system.) | ||||
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Publications
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| Sasikumar A, Arehart AR, Martin-Horcajo S, et al. (2013) Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy Applied Physics Letters. 103 |
| Arehart AR, Sasikumar A, Rajan S, et al. (2013) Direct observation of 0.57 eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors Solid-State Electronics. 80: 19-22 |
| Kocan M, Recht F, Umana-Membreno GA, et al. (2011) Implantation angle periphery effects on non-alloyed Si-implanted ohmic contacts for AlGaN/GaN high electron mobility transistors Solid-State Electronics. 56: 56-59 |
| Chu R, Poblenz C, Wong MH, et al. (2008) Improved performance of plasma-assisted molecular beam epitaxy grown AlGaN/GaN high electron mobility transistors with gate-recess and CF 4-treatment Applied Physics Express. 1: 0611011-0611013 |
| Kocan M, Umana-Membreno GA, Kilburn MR, et al. (2008) Scanning ion probe studies of silicon implantation profiles in AlGaN/GaN HEMT heterostructures Journal of Electronic Materials. 37: 554-557 |
| Cuerdo R, Pei Y, Recht F, et al. (2008) Temperature-dependent high-frequency performance of deep submicron AlGaN/GaN HEMTs Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 2994-2997 |
| Kocan M, Umana-Membreno GA, Recht F, et al. (2008) GaN vertical n-p junctions prepared by Si ion implantation Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 1938-1940 |
| Poblenz C, Corrion AL, Recht F, et al. (2007) Power performance of AlGaN/GaN HEMTs grown on SiC by ammonia-MBE at 4 and 10 GHz Ieee Electron Device Letters. 28: 945-947 |
| Pei Y, Suh C, Chu R, et al. (2007) AlGaN/GaN HEMT with high PAE and breakdown voltage grown by ammonia MBE 65th Drc Device Research Conference. 129-130 |
| Recht F, McCarthy L, Shen L, et al. (2007) AlGaN/ GaN HEMTs with large angle implanted nonalloyed ohmic contacts 65th Drc Device Research Conference. 37-38 |