Yun Wei, Ph.D.
Affiliations: | 2003 | University of California, Santa Barbara, Santa Barbara, CA, United States |
Area:
Electronics & PhotonicsGoogle:
"Yun Wei"Parents
Sign in to add mentor| Mark J. W. Rodwell | grad student | 2003 | UC Santa Barbara | |
| (Wide bandwidth power heterojunction bipolar transistors and amplifiers.) | ||||
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Publications
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| Wei Y, Scott DW, Dong Y, et al. (2004) A 160-GHz fT and 140-GHz fMAX submicrometer InP DHBT in MBE regrown-emitter technology Ieee Electron Device Letters. 25: 232-234 |
| Dong Y, Wei Y, Griffith Z, et al. (2004) InP heterojunction bipolar transistor with a selectively implanted collector Solid-State Electronics. 48: 1699-1702 |
| Scott DW, Kadow C, Dong Y, et al. (2004) Low-resistance n-type polycrystalline InAs grown by molecular beam epitaxy Journal of Crystal Growth. 267: 35-41 |
| Urteaga M, Scott D, Krishnan S, et al. (2003) G-Band (140-220-GHz) InP-Based HBT Amplifiers Ieee Journal of Solid-State Circuits. 38: 1451-1456 |
| Dong Y, Scott DW, Wei Y, et al. (2003) Low-resistance p-type polycrystalline GaSb grown by molecular beam epitaxy Journal of Crystal Growth. 256: 223-229 |
| Jaganathan S, Krishnan S, Mensa D, et al. (2001) An 18-GHz continuous-time Σ-Δ analog-digital converter implemented in InP-transferred substrate HBT technology Ieee Journal of Solid-State Circuits. 36: 1343-1350 |
| Lee S, Kim H, Urteaga M, et al. (2001) Transferred-substrate InP/InGaAs/InP double heterojunction bipolar transistors with fmax = 425 GHz Electronics Letters. 37: 1096 |
| Krishnan S, Mensa D, Guthrie J, et al. (2000) Broadband lumped HBT amplifiers Electronics Letters. 36: 466-467 |