Miguel Urteaga, Ph.D.
Affiliations: | 2003 | University of California, Santa Barbara, Santa Barbara, CA, United States |
Area:
Electronics & PhotonicsGoogle:
"Miguel Urteaga"Parents
Sign in to add mentor| Mark J. W. Rodwell | grad student | 2003 | UC Santa Barbara | |
| (Submicron indium phosphide-based heterojunction bipolar transistors.) | ||||
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Publications
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| Griffith Z, Urteaga M, Rowell P. (2020) A $W$ -Band SSPA With 100–140-mW $P_{\text{out}}$ , >20% PAE, and 26–30-dB $S_{21}$ Gain Across 88–104 GHz Ieee Microwave and Wireless Components Letters. 30: 189-192 |
| Yi C, Choi SH, Urteaga M, et al. (2019) 20-Gb/s ON–OFF-Keying Modulators Using 0.25- $\mu$ m InP DHBT Switches at 290 GHz Ieee Microwave and Wireless Components Letters. 29: 360-362 |
| Griffith Z, Urteaga M, Rowell P. (2019) A Compact 140-GHz, 150-mW High-Gain Power Amplifier MMIC in 250-nm InP HBT Ieee Microwave and Wireless Components Letters. 29: 282-284 |
| Shinohara K, King C, Carter AD, et al. (2018) GaN-Based Field-Effect Transistors With Laterally Gated Two-Dimensional Electron Gas Ieee Electron Device Letters. 39: 417-420 |
| Yi C, Urteaga M, Choi SH, et al. (2017) A 280-GHz InP DHBT Receiver Detector Containing a Differential Preamplifier Ieee Transactions On Terahertz Science and Technology. 7: 209-217 |
| Griffith Z, Urteaga M, Rowell P. (2017) A 190-GHz High-Gain, 3-dBm OP1dB Low DC-Power Amplifier in 250-nm InP HBT Ieee Microwave and Wireless Components Letters. 27: 1128-1130 |
| Kim S, Maurer R, Simsek A, et al. (2017) An Ultra-Low-Power Dual-Polarization Transceiver Front-End for 94-GHz Phased Arrays in 130-nm InP HBT Ieee Journal of Solid-State Circuits. 52: 2267-2276 |
| Mehrotra V, Arias A, Neft C, et al. (2016) GaN HEMT-Based >1-GHz Speed Low-Side Gate Driver and Switch Monolithic Process for 865-MHz Power Conversion Applications Ieee Journal of Emerging and Selected Topics in Power Electronics. 4: 918-925 |
| Seo M, Hacker J, Urteaga M, et al. (2015) A 529 GHZ dynamic frequency divider in 130 nm InP HBT process Ieice Electronics Express. 12 |
| Kim J, Jeon S, Kim M, et al. (2015) H-Band Power Amplifier Integrated Circuits Using 250-nm InP HBT Technology Ieee Transactions On Terahertz Science and Technology. 5: 215-222 |