Kung-Yen Lee, Ph.D.
Affiliations: | 2005 | Purdue University, West Lafayette, IN, United States |
Area:
Electronics and Electrical EngineeringGoogle:
"Kung-Yen Lee"Parents
Sign in to add mentor| Michael A. Capano | grad student | 2005 | Purdue | |
| (An investigation of silicon carbide surfaces and interfaces.) | ||||
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Publications
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| Cheng C, Huang C, Lee K, et al. (2018) A Novel Deep Junction Edge Termination for Superjunction MOSFETs Ieee Electron Device Letters. 39: 544-547 |
| Lee K, Liu Y, Wang S, et al. (2017) Influence of the Design of Square p+ Islands on the Characteristics of 4H-SiC JBS Ieee Transactions On Electron Devices. 64: 1394-1398 |
| Huang CF, Hsu HC, Chu KW, et al. (2015) Counter-doped JTE, an edge termination for HV SiC devices with increased tolerance to the surface charge Ieee Transactions On Electron Devices. 62: 354-358 |
| Lee K, Huang Y. (2012) An Investigation on Barrier Inhomogeneities of 4H-SiC Schottky Barrier Diodes Induced by Surface Morphology and Traps Ieee Transactions On Electron Devices. 59: 694-699 |
| Lee W, Chu K, Huang C, et al. (2012) Design and Fabrication of 4H–SiC Lateral High-Voltage Devices on a Semi-Insulating Substrate Ieee Transactions On Electron Devices. 59: 754-760 |
| Huang C, Kan C, Wu T, et al. (2009) 3510-V 390- $\hbox{m}\Omega\cdot\hbox{cm}^{2}$ 4H-SiC Lateral JFET on a Semi-Insulating Substrate Ieee Electron Device Letters. 30: 957-959 |
| Lee KY, Huang CF, Chen W, et al. (2007) The impact of surface morphology on C- and Si-face 4H-SiC Schottky barrier diodes Physica B: Condensed Matter. 401: 41-43 |
| Lee KY, Capano MA. (2007) The correlation of surface defects and reverse breakdown of 4H-SiC Schottky barrier diodes Journal of Electronic Materials. 36: 272-276 |
| Chen W, Lee Ky, Capano MA. (2006) Growth and characterization of nitrogen-doped C-face 4H-SiC epilayers Journal of Crystal Growth. 297: 265-271 |