Parents

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Alexander D. C. Grassie grad student 1990 University of Sussex (Physics Tree)
 (Conductivity in semiconductor microstructures)

Children

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Jong U. Bae grad student 2007 SUNY Buffalo
Nafees A. Kabir grad student 2007 SUNY Buffalo
Youngsoo Yoon grad student 2008 SUNY Buffalo
Myoung-Gu Kang grad student 2010 SUNY Buffalo
Teng-Yin Lin grad student 2010 SUNY Buffalo
Jungwoo Song grad student 2010 SUNY Buffalo
Girish Bohra grad student 2012 SUNY Buffalo
Jebum Lee grad student 2013 SUNY Buffalo
Ratchanok Somphonsane grad student 2013 SUNY Buffalo
Shiran Xiao grad student 2014 SUNY Buffalo
Zhiying Chen grad student 2015 SUNY Buffalo
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Publications

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Han JE, Aron C, Chen X, et al. (2023) Correlated insulator collapse due to quantum avalanche via in-gap ladder states. Nature Communications. 14: 2936
Nathawat J, Mansaray I, Sakanashi K, et al. (2023) Signatures of hot carriers and hot phonons in the re-entrant metallic and semiconducting states of Moiré-gapped graphene. Nature Communications. 14: 1507
Dhingra A, Hu X, Borunda MF, et al. (2022) Perspective: Molecular Transistors as Substitutes for Quantum Information Applications. Journal of Physics. Condensed Matter : An Institute of Physics Journal
He K, Barut B, Yin S, et al. (2022) Graphene on Chromia: A System for Beyond-Room-Temperature Spintronics. Advanced Materials (Deerfield Beach, Fla.). e2105023
Sakanashi K, Krüger P, Watanabe K, et al. (2021) Signature of Spin-Resolved Quantum Point Contact in p-Type Trilayer WSe van der Waals Heterostructure. Nano Letters
Somphonsane R, Ramamoorthy H, He G, et al. (2020) Universal scaling of weak localization in graphene due to bias-induced dispersion decoherence. Scientific Reports. 10: 5611
Lee YH, Xiao S, Kim KW, et al. (2019) Giant Zero Bias Anomaly due to Coherent Scattering from Frozen Phonon Disorder in Quantum Point Contacts. Physical Review Letters. 123: 056802
Nathawat J, Zhao M, Kwan CP, et al. (2019) Transient Response of h-BN-Encapsulated Graphene Transistors: Signatures of Self-Heating and Hot-Carrier Trapping. Acs Omega. 4: 4082-4090
Randle M, Lipatov A, Kumar A, et al. (2019) Reply to "Comment on 'Gate-Controlled Metal-Insulator Transition in TiS Nanowire Field-Effect Transistors'". Acs Nano. 13: 8498-8500
Randle M, Lipatov A, Kumar A, et al. (2018) Gate-Controlled Metal-Insulator Transition in TiS Nanowire Field-Effect Transistors. Acs Nano
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