Archie L. Holmes
Affiliations: | Materials Science and Engineering | University of Texas at Austin, Austin, Texas, U.S.A. |
Area:
Materials Science Engineering, Fluid and Plasma PhysicsGoogle:
"Archie Holmes"
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Publications
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| Tossoun B, Stephens R, Wang Y, et al. (2018) High-Speed InP-Based p-i-n Photodiodes With InGaAs/GaAsSb Type-II Quantum Wells Ieee Photonics Technology Letters. 30: 399-402 |
| Chen W, Chen B, Holmes A, et al. (2015) Investigation of traps in strained-well InGaAs/GaAsSb quantum well photodiodes Electronics Letters. 51: 1439-1440 |
| Chen B, Holmes AL. (2013) InP-based short-wave infrared and midwave infrared photodiodes using a novel type-II strain-compensated quantum well absorption region. Optics Letters. 38: 2750-3 |
| Chen B, Yuan J, Holmes AL. (2013) Dark current modeling of InP based SWIR and MWIR InGaAs/GaAsSb type-II MQW photodiodes Optical and Quantum Electronics. 45: 271-277 |
| Chen B, Holmes AL. (2013) Optical gain modeling of InP based InGaAs(N)/GaAsSb type-II quantum wells laser for mid-infrared emission Optical and Quantum Electronics. 45: 127-134 |
| Chen B, Holmes AL, Khalfin V, et al. (2012) Modeling of the type-II InGaAs/GaAsSb quantum well designs for mid-infrared laser diodes by k·p method Proceedings of Spie - the International Society For Optical Engineering. 8381 |
| Eisele H, Ebert P, Liu N, et al. (2012) Reverse mass transport during capping of In0.5Ga 0.5As/GaAs quantum dots Applied Physics Letters. 101 |
| Chen W, Chen B, Yuan J, et al. (2012) Bulk and interfacial deep levels observed in In0.53Ga0.47As/GaAs0.5Sb0.5 multiple quantum well photodiode Applied Physics Letters. 101: 52107 |
| Chen B, Zhou Q, McIntosh DC, et al. (2012) Natural lithography nano-sphere texturing as antireflective layer on InP-based pin photodiodes Electronics Letters. 48: 1340-1341 |
| Yuan J, Chen B, Holmes AL. (2012) Improved quantum efficiency of InGaAs/InP photodetectors using Ti/Au-SiO |