Leonard F. Register
Affiliations: | Electrical and Computer Engineering | University of Texas at Austin, Austin, Texas, U.S.A. |
Area:
Electronics and Electrical EngineeringGoogle:
"Leonard Register"Children
Sign in to add trainee| Yang-Yu Fan | grad student | 2002 | UT Austin |
| Wanqiang Chen | grad student | 2004 | UT Austin |
| Bahniman Ghosh | grad student | 2007 | UT Austin |
| Xin Zheng | grad student | 2007 | UT Austin |
| Keng-Ming Liu | grad student | 2008 | UT Austin |
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Publications
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| Jadaun P, Register LF, Banerjee SK. (2020) Rational design principles for giant spin Hall effect in -transition metal oxides. Proceedings of the National Academy of Sciences of the United States of America |
| Wu X, Mou X, Register LF, et al. (2019) Simulation of exciton condensate-mediated quantum transport in a double-monolayer transition metal dichalcogenide system Physical Review B. 99 |
| Bhatti AA, Crum DM, Valsaraj A, et al. (2019) Semi-classical Monte Carlo study of the impact of contact geometry and transmissivity on quasi-ballistic nanoscale Si and In0.53Ga0.47As n-channel FinFETs Journal of Applied Physics. 126: 105705 |
| Kim K, Prasad N, Movva HCP, et al. (2018) Spin-Conserving Resonant Tunneling in Twist-Controlled WSe2-hBN-WSe2 Heterostructures. Nano Letters |
| Burg GW, Prasad N, Kim K, et al. (2018) Strongly Enhanced Tunneling at Total Charge Neutrality in Double-Bilayer Graphene-WSe_{2} Heterostructures. Physical Review Letters. 120: 177702 |
| Pramanik T, Roy U, Jadaun P, et al. (2018) Write error rates of in-plane spin-transfer-torque random access memory calculated from rare-event enhanced micromagnetic simulations Journal of Magnetism and Magnetic Materials. 467: 96-107 |
| Burg GW, Prasad N, Fallahazad B, et al. (2017) Coherent Interlayer Tunneling and Negative Differential Resistance with High Current Density in Double Bilayer Graphene - WSe2 Heterostructures. Nano Letters |
| Mou X, Register LF, MacDonald AH, et al. (2017) Bilayer Pseudospin Junction Transistor (BiSJT) for “Beyond-CMOS” Logic Ieee Transactions On Electron Devices. 64: 4759-4762 |
| Kang S, Mou X, Fallahazad B, et al. (2017) Interlayer tunnel field-effect transistor (ITFET): physics, fabrication and applications Journal of Physics D: Applied Physics. 50: 383002 |
| Mohammed OB, Movva HCP, Prasad N, et al. (2017) ReS2-based interlayer tunnel field effect transistor Journal of Applied Physics. 122: 245701 |