Andrew D. Hood, Ph.D.
Affiliations: | 2007 | Electrical and Computer Engineering | Northwestern University, Evanston, IL |
Area:
Electronics and Electrical Engineering, Materials Science EngineeringGoogle:
"Andrew Hood"Parents
Sign in to add mentorManijeh Razeghi | grad student | 2007 | Northwestern | |
(Surface passivation and performance characteristics of type-II indium arsenide/gallium antimonide superlattice infrared photodetectors for focal plane arrays.) |
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Publications
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Grein CH, Flatté ME, Evans AJ, et al. (2013) Design of phosphorus-containing MWIR type-II superlattices for infrared photon detectors Ieee Journal On Selected Topics in Quantum Electronics. 19 |
Vurgaftman I, Canedy CL, Jackson EM, et al. (2011) Analysis and performance of type-II superlattice infrared detectors Optical Engineering. 50 |
Hood AD, Evans AJ, Ikhlassi A, et al. (2010) LWIR strained-layer superlattice materials and devices at teledyne imaging sensors Journal of Electronic Materials. 39: 1001-1006 |
Delaunay PY, Nguyen BM, Hoffman D, et al. (2008) High quantum efficiency two color type-II InAsGaSb n-i-p-p-i-n photodiodes Applied Physics Letters. 92 |
Hoffman D, Nguyen BM, Delaunay PY, et al. (2007) Beryllium compensation doping of InAsGaSb infrared superlattice photodiodes Applied Physics Letters. 91 |
Delaunay PY, Hood A, Nguyen BM, et al. (2007) Passivation of type-II InAsGaSb double heterostructure Applied Physics Letters. 91 |
Hood A, Delaunay PY, Hoffman D, et al. (2007) Near bulk-limited R |
Nguyen BM, Hoffman D, Wei Y, et al. (2007) Very high quantum efficiency in type-II InAs/GaSb superlattice photodiode with cutoff of 12 μm Applied Physics Letters. 90 |
Hoffman D, Hood A, Michel E, et al. (2006) Electroluminescence of InAs–GaSb Heterodiodes Ieee Journal of Quantum Electronics. 42: 126-130 |
Da Silva ECF, Hoffman D, Hood A, et al. (2006) Influence of residual impurity background on the nonradiative recombination processes in high purity InAsGaSb superlattice photodiodes Applied Physics Letters. 89 |