Paul D. Kirsch, Ph.D.
Affiliations: | 2001 | University of Texas at Austin, Austin, Texas, U.S.A. |
Area:
Chemical Engineering, Materials Science Engineering, Electronics and Electrical EngineeringGoogle:
"Paul Kirsch"Parents
Sign in to add mentor| John G. Ekerdt | grad student | 2001 | UT Austin | |
| (Surface and interfacial chemistry of high-k dielectric and interconnect materials on silicon.) | ||||
BETA: Related publications
See more...
Publications
|
You can help our author matching system! If you notice any publications incorrectly attributed to this author, please sign in and mark matches as correct or incorrect. |
| Kim TW, Koh D, Kwon H, et al. (2014) In0.7Ga0.3As quantum well MOSFETs with Al 2O3/HfO2 toward subthreshold swing of ∼60mV/dec Applied Physics Express. 7 |
| Kwon HM, Kwon SK, Jeong KS, et al. (2014) A correlation between oxygen vacancies and reliability characteristics in a single zirconium oxide metal-insulator-metal capacitor Ieee Transactions On Electron Devices. 61: 2619-2627 |
| Du Y, Yang L, Zhang J, et al. (2014) MoS2 Field-Effect transistors with graphene/metal heterocontacts Ieee Electron Device Letters. 35: 599-601 |
| Majumdar K, Hobbs C, Kirsch PD. (2014) Benchmarking transition metal dichalcogenide MOSFET in the ultimate physical scaling limit Ieee Electron Device Letters. 35: 402-404 |
| Koh D, Kwon HM, Kim TW, et al. (2014) Lg = 100 nm In0.7Ga0.3As quantum well metal-oxide semiconductor field-effect transistors with atomic layer deposited beryllium oxide as interfacial layer Applied Physics Letters. 104 |
| Baek RH, Kang CY, Sohn CW, et al. (2014) Investigation of process-induced performance variability and optimization of the 10 nm technology node Si bulk FinFETs Solid-State Electronics. 96: 27-33 |
| Sahiner MA, Lysaght PS, Price J, et al. (2014) Zr-induced structural changes in Hf |
| Johnson DW, Lee RTP, Hill RJW, et al. (2013) Threshold voltage shift due to charge trapping in dielectric-gated AlGaN/GaN high electron mobility transistors examined in au-free technology Ieee Transactions On Electron Devices. 60: 3197-3203 |
| Deora S, Bersuker G, Loh WY, et al. (2013) Positive bias instability and recovery in InGaAs channel nMOSFETs Ieee Transactions On Device and Materials Reliability. 13: 507-514 |
| Kim DH, Kim TW, Hill RJW, et al. (2013) High-speed E-mode InAs QW MOSFETs with Al2O3 insulator for future RF applications Ieee Electron Device Letters. 34: 196-198 |