Zhibin Ren, Ph.D.
Affiliations: | 2001 | Purdue University, West Lafayette, IN, United States |
Area:
Electronics and Electrical EngineeringGoogle:
"Zhibin Ren"Parents
Sign in to add mentor| Mark S. Lundstrom | grad student | 2001 | Purdue | |
| (Nanoscale MOSFETs: Physics, simulation and design.) | ||||
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Publications
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| Majumdar A, Ren Z, Koester SJ, et al. (2009) Undoped-body extremely thin SOI MOSFETs with back gates Ieee Transactions On Electron Devices. 56: 2270-2276 |
| Majumdar A, Ren Z, Sleight JW, et al. (2008) High-performance undoped-body 8-nm-thin SOI field-effect transistors Ieee Electron Device Letters. 29: 515-517 |
| Nayfeh HM, Singh DV, Hergenrother JM, et al. (2006) Effect of tensile uniaxial stress on the electron transport properties of deeply scaled FD-SOI n-type MOSFETs Ieee Electron Device Letters. 27: 288-290 |
| Singh DV, Jenkins KA, Sleight J, et al. (2006) Strained ultrahigh performance fully depleted nMOSFETs with ft of 330 GHz and sub-30-nm gate lengths Ieee Electron Device Letters. 27: 191-193 |
| Venugopal R, Ren Z, Lundstrom MS. (2003) Simulating quantum transport in nanoscale MOSFETs: ballistic hole transport, subband engineering and boundary conditions Ieee Transactions On Nanotechnology. 2: 135-143 |
| Ren Z, Venugopal R, Goasguen S, et al. (2003) nanoMOS 2.5: A two-dimensional simulator for quantum transport in double-gate MOSFETs Ieee Transactions On Electron Devices. 50: 1914-1925 |
| Ren Z, Hegde S, Doris B, et al. (2002) An experimental study on transport issues and electrostatics of ultrathin body SOI pMOSFETs Ieee Electron Device Letters. 23: 609-611 |
| Venugopal R, Ren Z, Datta S, et al. (2002) Simulating quantum transport in nanoscale transistors: Real versus mode-space approaches Journal of Applied Physics. 92: 3730-3739 |
| Guo J, Ren Z, Lundstrom M. (2002) Journal of Computational Electronics. 1: 185-189 |
| Rhew J, Ren Z, Lundstrom MS. (2002) Benchmarking Macroscopic Transport Models for Nanotransistor TCAD Journal of Computational Electronics. 1: 385-388 |