Amit A. Dikshit, Ph.D.
Affiliations: | 2006 | University of Wyoming, Laramie, WY, United States |
Area:
Electronics and Electrical Engineering, Radiation PhysicsGoogle:
"Amit Dikshit"Parents
Sign in to add mentor| Jon M. Pikal | grad student | 2006 | University of Wyoming | |
| (Characterization and modeling of 1.3 micron indium arsenide quantum dot lasers.) | ||||
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Publications
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| Singh U, Dikshit AA, Pikal JM. (2013) Rate equation modeling of current injection efficiency in 1.3-μm InAs-InGaAs quantum dot lasers Proceedings of Spie - the International Society For Optical Engineering. 8619 |
| Dikshit AA, Vangapally V, Pikal JM. (2006) Carrier lifetime and recombination in 1.3 μm P-doped InAs qauntum-dot lasers Proceedings of Spie - the International Society For Optical Engineering. 6133 |
| Dikshit AA, Vangapally V, Pikal JM. (2005) Carrier lifetime in 1.3 μm InAs quantam-dot lasers using small-signal modulation technique Proceedings of Spie - the International Society For Optical Engineering. 6017 |
| Dikshit AA, Pikal JM. (2004) Carrier distribution, gain, and lasing in 1.3-μm InAs-InGaAs quantum-dot lasers Ieee Journal of Quantum Electronics. 40: 105-112 |
| Dikshit AA, Pikal JM. (2003) Effect of free carriers and excitons on the gain and temperature characteristics of InAs/InGaAs quantum dot lasers Proceedings of Spie - the International Society For Optical Engineering. 5248: 166-175 |
| Dikshit AA, Pikal JM. (2002) Effect of excited state transitions and auger recombination on the T0 of InAs/InGaAs quantum dot lasers Pacific Rim Conference On Lasers and Electro-Optics, Cleo - Technical Digest. 547-548 |