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James Kolodzey

Affiliations: 
Department of Electrical and Computer Engineering University of Delaware, Newark, DE, United States 
Area:
Electronics and Electrical Engineering
Website:
https://www.ece.udel.edu/people/faculty/kolodzey/
Google:
"James Kolodzey"
Bio:

https://asa.lib.lehigh.edu/Record/10633488
https://www.proquest.com/openview/5e8d54275a7ab76a4c63ba8c0e30de7b/1

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Parents

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Sigurd Wagner grad student 1986 Princeton
 (Amorphous Silicon-Germanium Alloys and Superlattices)

Children

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Joy Laskar grad student 1992 UIUC
Michael W. Dashiell grad student 2000 University of Delaware
Kristofer J. Roe grad student 2001 University of Delaware
Ralph T. Troeger grad student 2004 University of Delaware
Pengcheng Lv grad student 2005 University of Delaware
Gary L. Katulka grad student 2007 University of Delaware
Guangchi Xuan grad student 2007 University of Delaware
Nathan A. Sustersic grad student 2009 University of Delaware
Matthew J. Coppinger grad student 2011 University of Delaware
Zhuopeng Zhang grad student 2012 University of Delaware
Nupur Bhargava grad student 2013 University of Delaware

Collaborators

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Publications

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Fernando NS, Carrasco RA, Hickey R, et al. (2018) Band gap and strain engineering of pseudomorphic Ge1−x−ySixSny alloys on Ge and GaAs for photonic applications Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 36: 21202
Imbrenda D, Hickey R, Carrasco RA, et al. (2018) Infrared dielectric response, index of refraction, and absorption of germanium-tin alloys with tin contents up to 27% deposited by molecular beam epitaxy Applied Physics Letters. 113: 122104
Hickey R, Fernando N, Zollner S, et al. (2017) Properties of pseudomorphic and relaxed germanium1−xtinx alloys (x < 0.185) grown by MBE Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35: 21205
Bhargava N, Gupta JP, Faleev N, et al. (2017) Thermal Stability of Annealed Germanium-Tin Alloys Grown by Molecular Beam Epitaxy Journal of Electronic Materials. 46: 1620-1627
Hart J, Adam T, Kim Y, et al. (2016) Temperature varying photoconductivity of GeSn alloys grown by chemical vapor deposition with Sn concentrations from 4% to 11% Journal of Applied Physics. 119
Hart J, Hazbun R, Eldridge D, et al. (2016) Tetrasilane and digermane for the ultra-high vacuum chemical vapor deposition of SiGe alloys Thin Solid Films. 604: 23-27
Zhang D, Hart J, Kolodzey J, et al. (2016) Microstructure and optoelectronic performance of SiGe/Si heterostructures Microelectronics Reliability
Hazbun R, Hart J, Hickey R, et al. (2016) Silicon epitaxy using tetrasilane at low temperatures in ultra-high vacuum chemical vapor deposition Journal of Crystal Growth. 444: 21-27
Zhang D, Liao Y, Li J, et al. (2016) Effect of in-situ annealing on the structural and optical properties of GeSn films grown by MBE Journal of Alloys and Compounds. 684: 643-648
Zhang D, Jin L, Li J, et al. (2016) MBE growth of ultra-thin GeSn film with high Sn content and its infrared/terahertz properties Journal of Alloys and Compounds. 665: 131-136
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