Matthew J. Coppinger, Ph.D.
Affiliations: | 2011 | Department of Electrical and Computer Engineering | University of Delaware, Newark, DE, United States |
Area:
Electronics and Electrical EngineeringGoogle:
"Matthew Coppinger"Parents
Sign in to add mentorJames Kolodzey | grad student | 2011 | University of Delaware | |
(Characteristics of germanium-tin photodetectors and terahertz microbolometers.) |
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Publications
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Kim S, Bhargava N, Gupta J, et al. (2014) Infrared photoresponse of GeSn/n-Ge heterojunctions grown by molecular beam epitaxy. Optics Express. 22: 11029-34 |
Kim S, Gupta J, Bhargava N, et al. (2013) Current-voltage characteristics of GeSn/Ge heterojunction diodes grown by molecular beam epitaxy Ieee Electron Device Letters. 34: 1217-1219 |
Bhargava N, Coppinger M, Prakash Gupta J, et al. (2013) Lattice constant and substitutional composition of GeSn alloys grown by molecular beam epitaxy Applied Physics Letters. 103 |
Coppinger M, Hart J, Bhargava N, et al. (2013) Photoconductivity of germanium tin alloys grown by molecular beam epitaxy Applied Physics Letters. 102 |
Coppinger M, Sustersic NA, Kolodzey J, et al. (2011) Sensitivity of a vanadium oxide uncooled microbolometer array for terahertz imaging Optical Engineering. 50 |
Nataraj L, Sustersic N, Coppinger M, et al. (2010) Structural and optical characterization of Germanium-rich islands on silicon grown by Molecular Beam Epitaxy Optics Infobase Conference Papers |
Nataraj L, Sustersic N, Coppinger M, et al. (2010) Structural and optoelectronic properties of germanium-rich islands grown on silicon using molecular beam epitaxy Applied Physics Letters. 96 |
Sustersic N, Nataraj L, Weiland C, et al. (2009) Effects of boron and phosphorus doping on the photoluminescence of self-assembled germanium quantum dots Applied Physics Letters. 94 |
Aina L, Hier H, Fathimulla A, et al. (2009) High detectivity dilute nitride strained layer superlattice detectors for LWIR and VLWIR applications Infrared Physics and Technology. 52: 310-316 |
Xuan G, Adam TN, Lv PC, et al. (2008) Dry etching of SiGe alloys by xenon difluoride Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 26: 385-388 |