John A. Woollam
Affiliations: | Engineering | The University of Nebraska - Lincoln, Lincoln, NE |
Area:
Materials Science Engineering, Optics Physics, Biomedical EngineeringGoogle:
"John Woollam"Children
Sign in to add trainee| Mathias Schubert | grad student | 1996-2000 | University of Nebraska - Lincoln |
| William H. Nosal | grad student | 2006 | University of Nebraska - Lincoln |
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Publications
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| Mock A, VanDerslice J, Korlacki R, et al. (2018) Elevated temperature dependence of the anisotropic visible-to-ultraviolet dielectric function of monoclinic β-Ga2O3 Applied Physics Letters. 112: 041905 |
| Hofmann T, Knight S, Sekora D, et al. (2017) Screening effects in metal sculptured thin films studied with terahertz Mueller matrix ellipsometry Applied Surface Science. 421: 513-517 |
| Mock A, Carlson T, VanDerslice J, et al. (2017) Multiple-layered effective medium approximation approach to modeling environmental effects on alumina passivated highly porous silicon nanostructured thin films measured by in-situ Mueller matrix ellipsometry Applied Surface Science. 421: 663-666 |
| Kühne P, Herzinger CM, Schubert M, et al. (2014) Invited article: An integrated mid-infrared, far-infrared, and terahertz optical Hall effect instrument. The Review of Scientific Instruments. 85: 071301 |
| Kühne P, Darakchieva V, Yakimova R, et al. (2013) Polarization selection rules for inter-Landau-level transitions in epitaxial graphene revealed by the infrared optical Hall effect. Physical Review Letters. 111: 077402 |
| Hofmann T, Schmidt D, Boosalis A, et al. (2012) Metal slanted columnar thin film THz optical sensors Mrs Proceedings. 1409 |
| Hofmann T, Kühne P, Schöche S, et al. (2012) Temperature dependent effective mass in AlGaN/GaN high electron mobility transistor structures Applied Physics Letters. 101: 192102 |
| Hofmann T, Schmidt D, Boosalis A, et al. (2011) THz dielectric anisotropy of metal slanted columnar thin films Applied Physics Letters. 99: 081903 |
| Schöche S, Shi J, Boosalis A, et al. (2011) Terahertz optical-Hall effect characterization of two-dimensional electron gas properties in AlGaN/GaN high electron mobility transistor structures Applied Physics Letters. 98 |
| Hofmann T, Boosalis A, Kühne P, et al. (2011) Hole-channel conductivity in epitaxial graphene determined by terahertz optical-Hall effect and midinfrared ellipsometry Applied Physics Letters. 98: 041906 |