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Tangali S. Sudarshan

Affiliations: 
Electrical Engineering University of South Carolina, Columbia, SC 
Area:
Electronics and Electrical Engineering, Materials Science Engineering
Website:
https://sc.edu/study/colleges_schools/engineering_and_computing/faculty-staff/sudarshantangali.php
Google:
"Tangali Sudarshan"
Bio:

DOI: 10.1109/TEI.1973.299272
DOI: 10.1109/TEI.1974.299325

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Parents

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James D. Cross grad student 1974 University of Waterloo
 (Flashover of Solid Insulators in Vacuum)

Children

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Peter G. Muzykov grad student 2001 University of South Carolina
Marc C. Tarplee grad student 2001 University of South Carolina
Roman V. Drachev grad student 2002 University of South Carolina
Yuri I. Khlebnikov grad student 2002 University of South Carolina
Alexander Grekov grad student 2005 University of South Carolina
Zehong Zhang grad student 2005 University of South Carolina
Amitesh Shrivastava grad student 2008 University of South Carolina
Yevgeniy Tupitsyn grad student 2008 University of South Carolina
Iftekhar Chowdhury grad student 2010 University of South Carolina
Tawhid A. Rana grad student 2013 University of South Carolina

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Publications

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Balachandran A, Sudarshan TS, Chandrashekhar MVS. (2017) Basal Plane Dislocation Free Recombination Layers on Low-Doped Buffer Layer for Power Devices Crystal Growth & Design. 17: 1550-1557
Chava VSN, Omar SU, Brown G, et al. (2016) Evidence of minority carrier injection efficiency >90% in an epitaxial graphene/SiC Schottky emitter bipolar junction phototransistor for ultraviolet detection Applied Physics Letters. 108
Balachandran A, Song H, Sudarshan TS, et al. (2016) 4H-SiC homoepitaxy on nearly on-axis substrates using TFS-towards high quality epitaxial growth Journal of Crystal Growth. 448: 97-104
Rana T, Chandrashekhar MVS, Daniels K, et al. (2016) SiC Homoepitaxy, Etching and Graphene Epitaxial Growth on SiC Substrates Using a Novel Fluorinated Si Precursor Gas (SiF4) Journal of Electronic Materials. 45: 2019-2024
Rana T, Chandrashekhar MVS, Daniels K, et al. (2015) Epitaxial growth of graphene on SiC by Si selective etching using SiF4in an inert ambient Japanese Journal of Applied Physics. 54
Balachandran A, Song HZ, Sudarshan TS, et al. (2015) Study of SiC epitaxial growth using tetrafluorosilane and dichlorosilane in vertical hotwall CVD furnace Materials Science Forum. 821: 137-140
Song HZ, Chandrashekhar MVS, Sudarshan TS. (2015) Effect of C/Si ratio and nitrogen doping on 4H-SiC epitaxial growth using dichlorosilane precursor Materials Science Forum. 821: 129-132
Song H, Chandrashekhar MVS, Sudarshan TS. (2015) Study of surface morphology, impurity incorporation and defect generation during homoepitaxial growth of 4H-SiC using dichlorosilane Ecs Journal of Solid State Science and Technology. 4: P71-P76
Abadier M, Song H, Sudarshan TS, et al. (2015) Glide of threading edge dislocations after basal plane dislocation conversion during 4H–SiC epitaxial growth Journal of Crystal Growth. 418: 7-14
Singh A, Uddin A, Sudarshan T, et al. (2014) Tunable reverse-biased graphene/silicon heterojunction Schottky diode sensor. Small (Weinheim An Der Bergstrasse, Germany). 10: 1555-65
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