Subrata Halder, Ph.D.
Affiliations: | 2006 | Lehigh University, Bethlehem, PA, United States |
Area:
Electronics and Electrical EngineeringGoogle:
"Subrata Halder"Parents
Sign in to add mentorJames C. Hwang | grad student | 2006 | Lehigh University | |
(Characterization and modeling of indium gallium phosphide/gallium arsenide HBT for pulsed RF power application.) |
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Publications
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Ding G, Molinero D, Wang W, et al. (2013) Intelligent bipolar control of MEMS capacitive switches Ieee Transactions On Microwave Theory and Techniques. 61: 464-471 |
Jin R, Halder S, Curtice WR, et al. (2011) Sub-Nanosecond Greater-Than-10-V Compact Tunable Pulse Generator for Low-Duty-Cycle High-Peak-Power Ultra-Wideband Applications Active and Passive Electronic Components. 2011: 1-8 |
Solazzi F, Palego C, Halder S, et al. (2011) Effect of the substrate on RF power-handling capability of micro-electromechanical capacitive switches Solid-State Electronics. 219-225 |
Jin R, Chen C, Halder S, et al. (2010) Safe Operating Area of GaAs HBTs Based on Sub-Nanosecond Pulse Characteristics Ieee Transactions On Microwave Theory and Techniques. 58: 3996-4003 |
Ding G, Chen C, Halder S, et al. (2010) Novel Technique for Determination of Actual Pixel Size in Dense Arrays of Infrared Detectors Ieee Electron Device Letters. 31: 839-841 |
Palego C, Deng J, Peng Z, et al. (2009) Robustness of RF MEMS Capacitive Switches With Molybdenum Membranes Ieee Transactions On Microwave Theory and Techniques. 57: 3262-3269 |
Halder S, Palego C, Peng Z, et al. (2009) Compact RF Model for Transient Characteristics of MEMS Capacitive Switches Ieee Transactions On Microwave Theory and Techniques. 57: 237-242 |
Deng J, Wang W, Halder S, et al. (2008) Temperature-Dependent RF Large-Signal Model of GaN-Based MOSHFETs Ieee Transactions On Microwave Theory and Techniques. 56: 2709-2716 |
Peng Z, Palego C, Halder S, et al. (2008) Dielectric Charging in Electrostatically Actuated MEMS Ohmic Switches Ieee Transactions On Device and Materials Reliability. 8: 642-646 |
Halder S, Hwang JCM, Lim J, et al. (2007) Effect of base-emitter breakdown on class-C power performance of common-base InGaP/GaAs HBTs Solid-State Electronics. 51: 900-904 |