Dennis T. Norton, Ph.D.
Affiliations: | 2013 | Physics | University of Iowa, Iowa City, IA |
Area:
Condensed Matter Physics, Optics Physics, Materials Science EngineeringGoogle:
"Dennis Norton"Parents
Sign in to add mentorThomas F. Boggess | grad student | 2013 | University of Iowa | |
(Type-II InAs/GaSb superlattice LEDs: Applications for infrared scene projector systems.) |
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Publications
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Ricker RJ, Provence S, Murray LM, et al. (2017) 512x512 array of dual-color InAs/GaSb superlattice light-emitting diodes Proceedings of Spie. 10124 |
Ricker RJ, Provence SR, Norton DT, et al. (2017) Broadband mid-infrared superlattice light-emitting diodes Journal of Applied Physics. 121: 185701 |
Danielson T, Franks G, Holmes N, et al. (2016) Achieving ultra-high temperatures with a resistive emitter array Proceedings of Spie. 9820 |
Norton DT, LaVeigne J, Franks G, et al. (2016) Development of a high-definition IR LED scene projector Proceedings of Spie. 9820 |
Ejzak GA, Dickason J, Marks JA, et al. (2016) 512 |
Lubyshev D, Fastenau JM, Qiu Y, et al. (2013) MBE growth of Sb-based nBn photodetectors on large diameter GaAs substrates Proceedings of Spie. 8704: 870412 |
Fastenau JM, Lubyshev D, Qiu Y, et al. (2013) MBE growth of GaSb-based photodetectors on 6-inch diameter GaAs substrates via select buffers Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 31 |
Murray LM, Yildirim A, Provence SR, et al. (2013) Causes and elimination of pyramidal defects in GaSb-based epitaxial layers Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 31 |
Norton DT, Olesberg JT, McGee RT, et al. (2013) 512 × 512 individually addressable MWIR LED arrays based on type-II InAs/GaSb superlattices Ieee Journal of Quantum Electronics. 49: 753-759 |
Fastenau JM, Lubyshev D, Qiu Y, et al. (2013) Sb-based IR photodetector epiwafers on 100 mm GaSb substrates manufactured by MBE Infrared Physics & Technology. 59: 158-162 |