Renbo Song, Ph.D.
Affiliations: | 2009 | Electrical Engineering | Lehigh University, Bethlehem, PA, United States |
Area:
Electronics and Electrical EngineeringGoogle:
"Renbo Song"Parents
Sign in to add mentorYujie Ding | grad student | 2009 | Lehigh University | |
(Fingerprinting biological materials based on Fourier transform infrared spectroscopy.) | ||||
Nelson Tansu | post-doc | 2010-2011 | Lehigh University |
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Publications
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Peart MR, Borovac D, Sun W, et al. (2020) AlInN/GaN diodes for power electronic devices Applied Physics Express. 13: 91006 |
Borovac D, Sun W, Peart MR, et al. (2020) Low background doping in AlInN grown on GaN via metalorganic vapor phase epitaxy Journal of Crystal Growth. 548: 125847 |
Al Muyeed SA, Wei X, Borovac D, et al. (2020) Controlled growth of InGaN quantum dots on photoelectrochemically etched InGaN quantum dot templates Journal of Crystal Growth. 540: 125652 |
Borovac D, Sun W, Song R, et al. (2020) On the thermal stability of nearly lattice-matched AlInN films grown on GaN via MOVPE Journal of Crystal Growth. 533: 125469 |
Al Muyeed SA, Sun W, Peart MR, et al. (2019) Recombination rates in green-yellow InGaN-based multiple quantum wells with AlGaN interlayers Journal of Applied Physics. 126: 213106 |
Zeng G, Sun W, Song R, et al. (2018) Publisher Correction: Crystal Orientation Dependence of Gallium Nitride Wear. Scientific Reports. 8: 2580 |
Sun W, Al Muyeed SA, Song R, et al. (2018) Integrating AlInN interlayers into InGaN/GaN multiple quantum wells for enhanced green emission Applied Physics Letters. 112: 201106 |
Zeng G, Sun W, Song R, et al. (2017) Crystal Orientation Dependence of Gallium Nitride Wear. Scientific Reports. 7: 14126 |
Al Muyeed SA, Sun W, Wei X, et al. (2017) Strain compensation in InGaN-based multiple quantum wells using AlGaN interlayers Aip Advances. 7: 105312 |
Li XH, Zhu P, Liu G, et al. (2013) Light extraction efficiency enhancement of III-nitride light-emitting diodes by using 2-D close-packed TiO2 microsphere arrays Ieee/Osa Journal of Display Technology. 9: 324-332 |