Ganesh Vanamu, Ph.D.
Affiliations: | 2005 | University of New Mexico, Albuquerque, NM, United States |
Area:
Chemical Engineering, Condensed Matter PhysicsGoogle:
"Ganesh Vanamu"Parents
Sign in to add mentorAbhaya Datye | grad student | 2005 | Univ. of New Mexico | |
(Growth of high quality germanium films on patterned silicon substrates and applications.) |
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Publications
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Tringe JW, Vanamu G, Zaidi SH. (2008) Templated control of Au nanospheres in silica nanowires Journal of Applied Physics. 104 |
Vanamu G, Datye AK, Dawson R, et al. (2006) Growth of high-quality GaAs on Ge/Si |
Vanamu G, Datye AK, Zaidi SH. (2006) Epitaxial growth of high-quality Ge films on nanostructured silicon substrates Applied Physics Letters. 88 |
Vanamu G, Robbins J, Khraishi TA, et al. (2006) Modeling of curvature in multilayered epitaxially grown films International Journal of Mechanics and Materials in Design. 3: 265-275 |
Huifang X, Vanamu G, Ziming N, et al. (2005) Metal ions incorporated titania nanotubes for hydrocarbon oxidation Materials Research Society Symposium Proceedings. 876: 250-255 |
Vanamu G, Datye AK, Zaidi SH. (2005) Growth of high quality Ge/Si |
Vanamu G, Datye AK, Zaidi SH. (2005) Heteroepitaxial growth on microscale patterned silicon structures Journal of Crystal Growth. 280: 66-74 |
Vanamu G, Robbins J, Khraishi TA, et al. (2005) Modeling and experiments on epitaxially grown multilayers with implications to critical thickness Journal of Electronic Materials. 34: 522-527 |
Vanamu G, Khraishi TA, Datye AK. (2005) A model for curvature in film-substrate system Materials Research Society Symposium Proceedings. 875: 97-102 |
Vanamu G, Datye AK, Zaidi SH. (2005) Ge growth on nanostructured silicon surfaces Materials Research Society Symposium Proceedings. 862: 213-218 |